MCB60I1200TZ I = 90 A D25 SiC Power MOSFET V = 1200 V DSS R = 34 m DS(on) max Single MOSFET Part number MCB60I1200TZ G S D Backside: Drain D (4) G (1) S (3) Features / Advantages: Applications: Package: TO-268AA (D3Pak-HV) High speed switching Solar inver ters Industr y standard outline with low capacitances High voltage DC/DC conver ters RoHS compliant High blocking voltage Motor dr ives Epoxy meets UL 94V-0 with low R Switch mode power supplies High creepage distance DS(on) Easy to parallel and simple to dr ive UPS between ter minals Avalanche r uggedness Batter y chargers Resistant to latch-up Induction heating Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component character istics. The infor mation in the valid application- and assembly notes must be consi- dered. Should you require product infor mation in excess of the data given in this product data sheet or which concer ns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For infor mation on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endanger ing or life suppor t applications, please notify. For any such application we urgently recommend - to perfor m joint r isk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product sur vey, and that we may make deliver y dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. 20160715 2016 IXYS All rights reserved 1 - 4 t e n t a t i v eMCB60I1200TZ MOSFET Ratings Symbol Definitions Conditions min. typ. max. drain source breakdown voltage V 1200 V DSS max transient gate source voltage V -10 +25 V GSM continous gate source voltage V recommended operational value -5 +20 V GS drain current I T = 25C 90 A D25 C I T = 80C 70 A D80 C I T = 100C 60 A D100 C R static drain source on resistance I = 50 A V = 20 V T = 25C 25 34 m DSon D GS VJ T = 150C 43 m VJ T = 175C 52 m VJ gate threshold voltage V I = 15 mA V = 10 V T = 25C 2.0 2.6 4.0 V GS(th) D DS VJ T = 175C 2.1 V VJ drain source leakage current I V = 1200 V V = 0 V T = 25C 2 100 A DSS DS GS VJ I gate source leakage current V = 0 V V = 20 V T = 25C 0.6 A GSS DS GS VJ R internal gate resistance 1.1 G C input capacitance 2790 pF iss output capacitance C V = 1000 V V = 0 V f = 1 MHz T = 25C 220 pF oss DS GS VJ reverse transfer (Miller) capacitance C 15 pF rss total gate charge Q 160 nC g gate source charge Q V = 800 V I = 50 A V = -5/20 V T = 25C 46 nC gs DS D GS VJ Q gate drain (Miller) charge 50 nC gd t turn-on delay time ns d(on) current rise time t ns r turn-off delay time t Inductive switching ns d(off) current fall time t V = 800 V I = 50 A T = 25C ns f DS D VJ turn-on energy per pulse E V = -5/20 V R = 2 (exter nal) mJ on GS G E turn-off energy per pulse mJ off reverse recovery losses at turn-off E mJ rec(off) thermal resistance junction to case R 0.27 K/W thJC 1) thermal resistance junction to heatsink R with heatsink compound IXYS test setup 0.38 K/W thJH 1) par t is mounted directly on heat sink Source-Drain Diode Ratings Symbol Definitions Conditions min. typ. max. I V = -5 V T = 25C A S25 GS C continuous source current I T = 80C A S100 C forward voltage drop V I = 25 A V = -5 V T = 25C 4.0 V SD F GS VJ T = 175C 3.5 V VJ t reverse recovery time 45 ns rr V = -5 V I = 50 A T = 25C GS F VJ Q reverse recovery charge (intrinsic diode) 410 nC RM V = 800 V -di /dt = 1000 A/s R F I max. reverse recovery current 13.5 A RM IXYS reserves the right to change limits, test conditions and dimensions. 20160715 2016 IXYS All rights reserved 2 - 4 t e n t a t i v e