MCC 310 MCD 310 I = 2x 500 A Thyristor Modules TRMS I = 2x 320 A TAVM Thyristor/Diode Modules V = 800-1800 V RRM 3 7 2 6 V V Type RSM RRM 5 4 1 V V DSM DRM V V Version 1 Version 1 900 800 MCC 310-08io1 MCD 310-08io1 1300 1200 MCC 310-12io1 MCD 310-12io1 1500 1400 MCC 310-14io1 MCD 310-14io1 1700 1600 MCC 310-16io1 MCD 310-16io1 1900 1800 MCC 310-18io1 MCD 310-18io1 3671 542 Symbol Test Conditions Maximum Ratings MCC I , I T = T 500 A TRMS FRMS VJ VJM I , I T = 85 C 180 sine 320 A 31542 TAVM FAVM C I , I T = 45 C t = 10 ms (50 Hz), sine 9200 A TSM FSM VJ V = 0 t = 8.3 ms (60 Hz), sine 9800 A R MCD T = T t = 10 ms (50 Hz), sine 8000 A VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 8600 A R 2 2 i dt T = 45 C t = 10 ms (50 Hz), sine 420 000 A s VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 400 000 A s R 2 T = T t = 10 ms (50 Hz), sine 320 000 A s VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 306 000 A s R Features International standard package (di/dt) T = T repetitive, I = 960 A 100 A/ s cr VJ VJM T Direct copper bonded Al O -ceramic f =50 Hz, t =200 s 2 3 P base plate V = 2/3 V D DRM Planar passivated chips I = 1 A non repetitive, I = 320 A 500 A/ s G T Isolation voltage 3600 V~ di /dt = 1 A/ s G UL registered, E 72873 (dv/dt) T = T V = 2/3 V 1000 V/ s cr VJ VJM DR DRM Keyed gate/cathode twin pins R = method 1 (linear voltage rise) GK Applications P T = T t = 30 s 120 W GM VJ VJM P Motor control I = I t = 500 s60W T TAVM P Power converter P 20 W GAV Heat and temperature control for V 10 V industrial furnaces and chemical RGM processes T -40...+140 C VJ Lighting control T 140 C VJM Contactless switches T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ Advantages ISOL I 1 mA t = 1 s 3600 V~ Space and weight savings ISOL Simple mounting M Mounting torque (M5) 2.5-5/22-44 Nm/lb.in. d Improved temperature and power Terminal connection torque (M8) 12-15/106-132 Nm/lb.in. cycling Weight Typical including screws 320 g Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 4 030MCC 310 MCD 310 Symbol Test Conditions Characteristic Values I T = T V = V V = V 70 mA RRM VJ VJM R RRM D DRM I 40 mA DRM V , V I , I = 600 A T = 25 C 1.32 V T F T F VJ V For power-loss calculations only (T = 140 C) 0.8 V T0 VJ r 0.82 m T V V = 6 V T = 25 C2V GT D VJ T = -40 C3V VJ I V = 6 V T = 25 C 150 mA GT D VJ T = -40 C 200 mA VJ V T = T V = 2/3 V 0.25 V GD VJ VJM D DRM I 10 mA GD I T = 25 C t = 30 s V = 6 V 200 mA L VJ P D I = 0.45 A di /dt = 0.45 A/ s G G I T = 25 C V = 6 V R = 150 mA H VJ D GK t T = 25 C V = 1/2 V 2 s gd VJ D DRM Fig. 1 Gate trigger characteristics I = 1 A di /dt = 1 A/ s G G t T = T I = 300 A, t = 200 s -di/dt = 10 A/ s typ. 200 s q VJ VJM T P V = 100 V dv/dt = 50 V/ s V = 2/3 V R D DRM Q T = 125 C I , I = 400 A, -di/dt = 50 A/ s 760 C S VJ T F I 275 A RM R per thyristor/diode DC current 0.112 K/W thJC per module other values 0.056 K/W R per thyristor/diode DC current see Fig. 8/9 0.152 K/W thJK per module 0.076 K/W d Creepage distance on surface 12.7 mm S d Strike distance through air 9.6 mm A 2 a Maximum allowable acceleration 50 m/s Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394 ) Threaded spacer for higher Anode/ MCC MCD Cathode construction: Type ZY 250, material brass 20 12 14 2000 IXYS All rights reserved 2 - 4