MCC56-14IO1(B) IXYS

MCC56-14io1B V= 2x 1400V RRM Thyristor Module I= 60A TAV VV= 1.24 T Phase leg Part number MCC56-14io1B Backside: isolated 3 1 2 6 7 5 4 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 3600 Planar passivated chip Softstart AC motor control Industry standard outline Long-term stability DC Motor control RoHS compliant Direct Copper Bonded Al2O3-ceramic Power converter Soldering pins for PCB mounting AC power control Base plate: DCB ceramic Lighting and temperature control Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a 2013 IXYS all rights reservedMCC56-14io1B Ratings Thyristor Conditions Symbol Definition min. typ. max. Unit V T = 25C 1500 V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ V T = 25C 1400 V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = V1400 T = 25C 200 A R/D R/D VJ V = V1400 T = C125 5 mA R/D VJ forward voltage drop V I = A100 T = 25C 1.26 V T T VJ 1.57 V I = A200 T I = A100 T = C125 1.24 V T VJ I = A200 1.62 V T average forward current T = C85 T = C125 60 A I TAV C VJ RMS forward current I 180 sine 100 A T(RMS) V threshold voltage T = C125 0.85 V T0 VJ for power loss calculation only slope resistance r 3.7 m T R 0.45 K/W thermal resistance junction to case thJC thermal resistance case to heatsink R K/W thCH 0.20 P total power dissipation T = 25C 222 W tot C max. forward surge current I t = 10 ms (50 Hz), sine T = 45C 1.50 kA TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.62 kA R t = 10 ms (50 Hz), sine T = C125 1.28 kA VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.38 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 11.3 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 10.9 kAs R t = 10 ms (50 Hz), sine T = C125 8.13 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 7.87 kAs R junction capacitance C V = V400 f = 1 MHz T = 25C 74 pF J R VJ P max. gate power dissipation t = 30 s T = C125 10 W GM P C t = 300 s 5 W P P 0.5 W average gate power dissipation GAV critical rate of rise of current (di/dt) T = 125C f = 50 Hz repetitive, I = 150 A 150 A/s cr VJ T t = s 200 di /dt=0.45 A/s P G IA=0.45 V = V non-repet., I = 60 A 500 A/s G D DRM T critical rate of rise of voltage (dv/dt) V = V T=125C 1000 V/s VJ cr D DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V= 6 V T = 25C 1.5 V GT D VJ T= -40C 1.6 V VJ gate trigger current I V= 6 V T = 25C 100 mA VJ GT D T= -40C 200 mA VJ gate non-trigger voltage V V = V T= 125C 0.2 V GD D DRM VJ gate non-trigger current I 10 mA GD latching current I t=10s T= 25C 450 mA VJ L p IA= 0.45 di /dt=0.45 A/s G G holding current I V= 6 V R = T= 25C 200 mA H D GK VJ gate controlled delay time t V = V T= 25C 2s gd D DRM VJ IA= 0.45 di /dt=0.45 A/s G G turn-off time t V = 100 V I = 150 A V = V T= 125C 150 s q R T D DRM VJ di/dt = 10 A/s dv/dt = 20V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a 2013 IXYS all rights reserved