MCD220-14io1 Phase out V = 2x1400 V RRM Thyristor Diode Module I = 250 A TAV V = 1.14 V T Phase leg Part number MCD220-14io1 Backside: isolated 3 1 2 5 4 Features / Advantages: Applications: Package: Y2 Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 3600 Planar passivated chip Softstart AC motor control Industry standard outline Long-term stability DC Motor control RoHS compliant Direct Copper Bonded Al2O3-ceramic Power converter Soldering pins for PCB mounting AC power control Base plate: DCB ceramic Lighting and temperature control Reduced weight Advanced power cycling Recommended replacement: MCD310-14io1 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20170317d 2017 IXYS all rights reservedMCD220-14io1 Phase out Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1500 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1400 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 4 0 0 V T = 25C 1 mA R/D R/D VJ V = 1 4 0 0 V T = 1 4 0 C 40 mA R/D VJ forward voltage drop V I = 2 0 0 A T = 25C 1.24 V T T VJ I = 4 0 0 A 1.39 V T T = C 1.14 V I = 2 0 0 A 125 T VJ I = 4 0 0 A 1.33 V T average forward current T = 8 5 C T = 1 4 0 C 250 A I TAV C VJ RMS forward current I 180 sine 400 A T(RMS) V T = 1 4 0 C 0.90 V threshold voltage T0 VJ for power loss calculation only slope resistance r 1 m T 0.14 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.040 K/W thCH P total power dissipation T = 25C 820 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 8.50 kA I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 9.18 kA R t = 10 ms (50 Hz), sine T = 1 4 0 C kA 7.23 VJ t = 8,3 ms (60 Hz), sine V = 0 V 7.81 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 361.3 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 350.6 kAs R t = 10 ms (50 Hz), sine T = 1 4 0 C 261.0 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 253.4 kAs R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 438 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 4 0 C 120 W GM P C t = 500 s 60 W P 20 W P average gate power dissipation GAV critical rate of rise of current T = 140C f = 50 Hz repetitive, I = 750 A 100 (di/dt) A/s cr VJ T 1 t = 2 0 0 s di /dt = A/s P G I = 1A V = V non-repet., I = 250 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 140C 1000 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 2 V GT D VJ T = -40C 3 V VJ gate trigger current V = 6 V T = 25C 150 mA I VJ GT D T = -40C 200 mA VJ gate non-trigger voltage V V = V T = 140C 0.25 V GD D DRM VJ gate non-trigger current I 10 mA GD latching current t = 30 s T = 25C 200 mA I VJ L p I = 0.45A di /dt = 0.45 A/s G G holding current I V = 6 V R = T = 25C 150 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 1A di /dt = 1 A/s G G turn-off time V = 100 V I = 250 A V = V T =125 C 200 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 50 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20170317d 2017 IXYS all rights reserved