MCC 310 MCD 310 I = 2x 500 A Thyristor Modules TRMS I = 2x 320 A TAVM Thyristor/Diode Modules V = 2200 V RRM 3 7 3671 542 2 6 V V Type RSM RRM 5 4 V V 1 DSM DRM MCC V V Version 1 Version 1 2300 2200 MCC 310-22io1 MCD 310-22io1 31542 MCD Symbol Conditions Maximum Ratings Features I , I T = T 500 A International standard package TRMS FRMS VJ VJM I , I T = 85C 180 sine 320 A Direct copper bonded Al O -ceramic TAVM FAVM C 2 3 base plate I , I T = 45C t = 10 ms (50 Hz), sine 8000 A TSM FSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 8600 A R Isolation voltage 3600 V~ T = T t = 10 ms (50 Hz), sine 7000 A UL registered, E 72873 VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 7500 A Keyed gate/cathode twin pins R 2 2 I dt T = 45C t = 10 ms (50 Hz), sine 320 000 A s VJ 2 Applications V = 0 t = 8.3 ms (60 Hz), sine 310 000 A s R Motor control 2 T = T t = 10 ms (50 Hz), sine 245 000 A s VJ VJM Power converter 2 V = 0 t = 8.3 ms (60 Hz), sine 235 000 A s R Heat and temperature control for (di/dt) T = T repetitive, I = 960 A 100 A/s cr VJ VJM T industrial furnaces and chemical f = 50 Hz, t = 200 s P processes 2 V = / V D 3 DRM Lighting control I = 1 A non repetitive, I = 320 A 500 A/s G T Contactless switches di /dt = 1 A/s G 2 Advantages (dv/dt) T = T V = / V 1000 V/s cr VJ VJM DR 3 DRM R = method 1 (linear voltage rise) GK Space and weight savings Simple mounting P T = T t = 30 s 120 W GM VJ VJM P Improved temperature and power I = I t = 500 s 60 W T TAVM P cycling P 20 W GAV Reduced protection circuits V 10 V RGM T -40...+140 C VJ T 140 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2.5-5/22-44 Nm/lb.in. d Terminal connection torque (M8) 12-15/106-132 Nm/lb.in. Weight Typical including screws 320 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 1 0620MCC 310 MCD 310 Symbol Conditions Characteristic Values I T = T V = V V = V 70 mA RRM VJ VJM R RRM D DRM I 40 mA DRM V , V I , I = 600 A T = 25C 1.40 V T F T F VJ V For power-loss calculations only (T = 140C) 0.8 V T0 VJ r 0.82 m T V V = 6 V T = 25C 2 V GT D VJ T = -40C 3 V VJ I V = 6 V T = 25C 150 mA GT D VJ T = -40C 200 mA VJ 2 V T = T V = / V 0.25 V GD VJ VJM D 3 DRM I 10 mA GD I T = 25C t = 30 s V = 6 V 200 mA L VJ P D I = 0.45 A di /dt = 0.45 A/s G G I T = 25C V = 6 V R = 150 mA H VJ D GK t T = 25C V = V 2s gd VJ D DRM I = 1 A di /dt = 1 A/s G G Fig. 1 Gate trigger characteristics t T = T I = 300 A, t = 200 s -di/dt = 10 A/s typ. 200 s q VJ VJM T P 2 V = 100 V dv/dt = 50 V/s V = / V R D 3 DRM Q T = 125C I , I = 400 A, -di/dt = 50 A/s 760 C S VJ T F I 275 A RM R per thyristor/diode DC current 0.112 K/W thJC per module other values 0.056 K/W R per thyristor/diode DC current see Fig. 8/9 0.152 K/W thJK per module 0.076 K/W d Creepage distance on surface 12.7 mm S d Strike distance through air 9.6 mm A 2 a Maximum allowable acceleration 50 m/s Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394 ) MCC MCD Fig. 2 Gate trigger delay time Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 14 IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 2 0620