MCO 450 I = 750 A FRMS High Power Single I = 464 A FAVM Thyristor Modules V = 2000-2200 V RRM 3 5 4 2 V V Type RSM RRM V V 2100 2000 MCO 450-20io1 2300 2200 MCO 450-22io1 E72873 Features Symbol Conditions Maximum Ratings Direct Copper Bonded Al O ceramic 2 3 I T = T T = 25C 750 A TRMS VJ VJM C with copper base plate I 180 sine T = 85C 464 A TAV C Planar passivated chips I T = 45C t = 10 ms (50 Hz) 15000 A TSM VJ Isolation voltage 3600 V~ V = 0 t = 8.3 ms (60 Hz) 16000 A R UL registered T = T t = 10 ms (50 Hz) 13000 A VJ VJM Keyed gate/cathode twin pins V = 0 t = 8.3 ms (60 Hz) 14400 A R 2 2 I t T = 45C t = 10 ms (50 Hz) 1 125 000 A s Applications VJ 2 V = 0 t = 8.3 ms (60 Hz) 1 062 000 A s R Motor control, soft starter 2 T = T t = 10 ms (50 Hz) 845 000 A s Power converter VJ VJM 2 V = 0 t = 8.3 ms (60 Hz) 813 000 A s Heat and temperature control for R industrial furnaces and chemical (di/dt) T = T repetitive, I = 960 A 100 A/s cr VJ VJM T processes f = 50 Hz t = 200 s p Lighting control 2 V = / V D 3 DRM L I = 1 A non repetitive, I = I 500 A/s G T TAVM di /dt = 1 A/s G Advantages 2 (dv/dt) T = T V = / V 1000 V/s cr VJ VJM D 3 DRM Improved temperature & power cycling R = method 1 (linear voltage rise) GK Reduced protection circuits P T = T t = 30 s 120 W GM VJ VJM p I = I t = 500 s 60 W T T(AV)M p P 30 W GAV V 10 V RGM T -40...+130 C VJ T 130 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I < 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M6) 4.5 - 7 Nm d Terminal connection torque (M8) 11-13 Nm Weight Typical including screws 650 g Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20121206e 2012 IXYS All rights reserved 1 - 4MCO 450 10 Symbol Conditions Characteristic Values 1: I , T = 130C GT VJ 2: I , T = 25C GT VJ typ. max. 3: I , T = -40C GT VJ I V = V T = T 40 mA RRM R RRM VJ VJM 3 V I = 600 A T = 25C 1.15 V T T VJ 2 V For power-loss calculations only 0.77 V T0 6 V G 1 5 r T = T 0.42 mW t VJ VJM 4 1 V V = 6 V T = 25C 2 V V GT D VJ T = -40C 3 V VJ I V = 6 V T = 25C 300 mA GT D VJ T = -40C 400 mA VJ 2 4: P = 20 W GM V V = / V T = T 0.25 V GD D 3 DRM VJ VJM 5: P = 60 W GM I 10 mA I , T = 130C GD VJ GD 6: P = 120 W GM I t = 30 s V = 6 V T = 25C 400 mA 0.1 L p D VJ -3 -2 -1 0 1 2 10 10 10 10 10 10 I = 1 A di /dt = 1 A/s G G I A G I V = 6 V R = T = 25C 300 mA H D GK VJ Fig. 1 Gate trigger characteristics t V = V T = 25C 2 s gd D DRM VJ I = 1 A di /dt = 1 A/s G G 100 2 T = 25C VJ t V = / V T = T 350 s q D 3 DRM VJ VJM dv/dt = 50 V/s -di/dt = 10 A/s I = 500 A V = 100 V t = 200 s T R p R DC current 0.072 K/W thJC typ. Limit R DC current 0.096 K/W thJK t gd d Creeping distance on surface 12.7 mm S 10 d Creepage distance in air 9.6 mm A s 2 a Maximum allowable acceleration 50 m/s 1 0.01 0.1 1 10 I A G Fig. 2 Gate trigger delay time IXYS reserves the right to change limits, test conditions and dimensions. 20121206e 2012 IXYS All rights reserved 2 - 4