X-On Electronics has gained recognition as a prominent supplier of MCO600-16io1 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MCO600-16io1 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MCO600-16io1 IXYS

MCO600-16io1 electronic component of IXYS
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Part No.MCO600-16io1
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 600 Amps 1600V
Datasheet: MCO600-16io1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 179.868 ea
Line Total: USD 179.87 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 179.868
6 : USD 173.6726

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 237.664

   
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We are delighted to provide the MCO600-16io1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCO600-16io1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MCO600-16io1 V = 1600 V RRM Thyristor Module I = 600 A TAV V = 1.06 V T Single Thyristor Part number MCO600-16io1 Backside: isolated 3 5 4 2 Features / Advantages: Applications: Package: Y1 Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 3600 Planar passivated chip Softstart AC motor control Industry standard outline Long-term stability DC Motor control RoHS compliant Direct Copper Bonded Al2O3-ceramic Power converter Soldering pins for PCB mounting AC power control Base plate: Copper Lighting and temperature control internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210f 2019 IXYS all rights reservedMCO600-16io1 Ratings Thyristor Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1600 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 6 0 0 V T = 25C 2 mA R/D R/D VJ V = 1 6 0 0 V T = 1 2 5 C 40 mA R/D VJ forward voltage drop V I = 6 0 0 A T = 25C 1.12 V T T VJ I = 1 2 0 0 A 1.34 V T T = C 1.06 V I = 6 0 0 A 125 T VJ I = 1 2 0 0 A 1.33 V T average forward current T = 8 5 C T = 1 4 0 C 600 A I TAV C VJ RMS forward current I 180 sine 940 A T(RMS) V T = 1 4 0 C 0.81 V threshold voltage T0 VJ for power loss calculation only slope resistance r 0.4 m T 0.065 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.02 K/W thCH P total power dissipation T = 25C 1770 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 15.0 kA I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 16.2 kA R t = 10 ms (50 Hz), sine T = 1 4 0 C kA 12.8 VJ t = 8,3 ms (60 Hz), sine V = 0 V 13.8 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 1.13 MAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.09 MAs R t = 10 ms (50 Hz), sine T = 1 4 0 C 812.8 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 788.8 kAs R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 620 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 4 0 C 120 W GM P C t = 300 s 60 W P 20 W P average gate power dissipation GAV critical rate of rise of current T = 140C f = 50 Hz repetitive, I =1800 A 100 (di/dt) A/s cr VJ T 1 t = 2 0 0 s di /dt = A/s P G I = 1A V = V non-repet., I = 600 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 140C 1000 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 2 V GT D VJ T = -40C 3 V VJ gate trigger current V = 6 V T = 25C 300 mA I VJ GT D T = -40C 400 mA VJ gate non-trigger voltage V V = V T = 140C 0.25 V GD D DRM VJ gate non-trigger current I 10 mA GD latching current t = 30 s T = 25C 400 mA I VJ L p I = 1A di /dt = 1 A/s G G holding current I V = 6 V R = T = 25C 300 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 1A di /dt = 1 A/s G G turn-off time V = 100 V I = 600A V = V T =125 C 350 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 50 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210f 2019 IXYS all rights reserved

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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