Date: 29.09.2014 IXYS Data Sheet Issue: 3 Thyristor/Diode Modules M 501 Absolute Maximum Ratings VRRM V DRM V MCC MCD MDC 1200 501-12io2 501-12io2 501-12io2 1400 501-14io2 501-14io2 501-14io2 1600 501-16io2 501-16io2 501-16io2 1800 501-18io2 501-18io2 501-18io2 MAXIMUM VOLTAGE RATINGS UNITS LIMITS 1) V Repetitive peak off-state voltage 1200-1800 V DRM 1) V Non-repetitive peak off-state voltage 1300-1900 V DSM 1) V Repetitive peak reverse voltage 1200-1800 V RRM 1) V Non-repetitive peak reverse voltage 1300-1900 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS 2) I Maximum average on-state current, T = 85C 503 A T(AV)M C 2) I Maximum average on-state current. T = 100C 347 A T(AV)M C 2) I Nominal RMS on-state current, T = 55C 1195 A T(RMS)M C I D.C. on-state current, T = 55C 985 A T(d.c.) C 3) ITSM Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM 14.5 kA 3) I Peak non-repetitive surge t = 10 ms, V 10V 16.0 kA TSM2 p RM 2 2 3) 6 2 I t I t capacity for fusing t = 10 ms, V = 60%V 1.0510 A s p RM RRM 2 2 3) 6 2 I t I t capacity for fusing t = 10 ms, V 10 V 1.2810 A s p RM 4) Critical rate of rise of on-state current (repetitive) 200 A/s (di/dt) cr 4) Critical rate of rise of on-state current (non-repetitive) 400 A/s V Peak reverse gate voltage 5 V RGM P Mean forward gate power 4 W G(AV) P Peak forward gate power 30 W GM 5) V Isolation Voltage 3000 V ISOL T Operating temperature range -40 to +125 C vj op Tstg Storage temperature range -40 to +125 C Notes: 1) De-rating factor of 0.13% per C is applicable for Tvj below 25C. 2) Single phase 50 Hz, 180 half-sinewave. 3) Half-sinewave, 125C T initial. vj 4) VD = 67% VDRM, IFG = 2 A, tr 0.5s, TC = 125C. 5) AC RMS voltage, 50 Hz, 1min test Rating Report. Types M 501-12io2 and M 501-18io2 Issue 3 Page 1 of 10 September, 2014 IXYS Thyristor/Diode Module Types M 501-12io2 to M 501-18io2 Characteristics 1) PARAMETER MIN. TYP. MAX. TEST CONDITIONS UNITS V Maximum peak on-state voltage - - 1.50 I = 1700 A V TM TM V Maximum peak on-state voltage - - 1.43 I = 1500 A V TM TM V Threshold voltage - - 0.85 V T0 r Slope resistance - - 0.30 T mW (dv/dt) c Critical rate of rise of off-state voltage 1000 - - V = 80% V , linear ramp, Gate o/c D DRM V/s r I Peak off-state current - - 70 Rated V mA DRM DRM I Peak reverse current - - 70 Rated V mA RRM RRM V Gate trigger voltage - - 2.5 V GT T = 25C, V = 12 V, I = 3 A vj D T I Gate trigger current - - 250 mA GT V Gate non-trigger voltage 0.25 - - 67% V V GD DRM I Latching current - - 1000 V = 12 V, T = 25C mA L D vj I Holding current - - 300 V = 12 V, T = 25C mA H D vj t Gate controlled turn-on delay time - - 2.0 gd I = 2 A, t = 1 s, V = 40%V , FG r D DRM s I = 1500 A, di/dt = 10 A/s, T = 25C TM vj t Turn-on time - - 8.0 gt Q Recovered Charge - 1350 1550 C rr Qra Recovered Charge, 50% chord - 1150 - C I = 1000 A, t = 1 ms, di/dt = 10A/s, TM p V = 100 V R I Reverse recovery current - 120 - A rm t Reverse recovery time, 50% chord - 19 - s rr I = 1500 A, t = 1 ms, di/dt = 10 A/s, TM p t Turn-off time - - 200 s q V = 100 V, V = 67%V , dv /dt = 50 V/s R DR DRM DR - - 0.062 Single Thyristor K/W R Thermal resistance, junction to case thJC - - 0.031 Whole Module K/W - - 0.02 Single Thyristor K/W R Thermal resistance, case to heatsink thCH - - 0.01 Whole Module K/W F Mounting force (to heatsink) 4.25 - 5.75 Nm 1 2) F Mounting force (to terminals) 10.2 - 13.8 Nm 2 W Weight - 1.5 - kg t Notes: 1) Unless otherwise indicated T =125C. vj 2) Screws must be lubricated. Rating Report. Types M 501-12io2 and M 501-18io2 Issue 3 Page 2 of 10 September, 2014