X-On Electronics has gained recognition as a prominent supplier of MDD172-14N1 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MDD172-14N1 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MDD172-14N1 IXYS

MDD172-14N1 electronic component of IXYS
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Part No.MDD172-14N1
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: IXYS Discrete Semiconductor Modules 172 Amps 1400V
Datasheet: MDD172-14N1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 58.6548 ea
Line Total: USD 58.65 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 58.6548
12 : USD 54.6804
30 : USD 52.6824
252 : USD 47.5092

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 63.5447

   
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RoHS - XON
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Vr - Reverse Voltage
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Minimum Operating Temperature
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We are delighted to provide the MDD172-14N1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDD172-14N1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MDD172-08N1 V = 2x 800 V RRM Standard Rectifier Module I = 190 A FAV V = 0.96 V F Phase leg Part number MDD172-08N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y4 Package with DCB ceramic Diode for main rectification Isolation Voltage: V~ 3600 Improved temperature and power cycling For single and three phase Industry standard outline Planar passivated chips bridge configurations RoHS compliant Very low forward voltage drop Supplies for DC power equipment Soldering pins for PCB mounting Very low leakage current Input rectifiers for PWM inverter Base plate: DCB ceramic Battery DC power supplies Reduced weight Field supply for DC motors Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d 2019 IXYS all rights reservedMDD172-08N1 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 8 0 0 V T = 25C 1 mA R VJ R V = 8 0 0 V T = 1 5 0 C 20 mA R VJ forward voltage drop V I = 1 5 0 A T = 25C 1.07 V F F VJ I = 3 0 0 A 1.22 V F T = C 0.96 V I = 1 5 0 A 125 F VJ I = 3 0 0 A 1.16 V F average forward current T = 1 0 0 C T = 1 5 0 C 190 A I FAV C VJ RMS forward current I 180 sine 300 A F(RMS) V T = 1 5 0 C 0.80 V threshold voltage F0 VJ for power loss calculation only slope resistance r 0.8 m F thermal resistance junction to case 0.21 K/W R thJC thermal resistance case to heatsink K/W R 0.08 thCH P total power dissipation T = 25C 600 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 6.60 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 7.13 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C kA 5.61 VJ t = 8,3 ms (60 Hz), sine V = 0 V 6.06 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 217.8 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 211.5 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 157.4 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 152.8 kAs R V = 4 0 0 V f = 1 MHz T = 25C 238 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d 2019 IXYS all rights reserved

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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