MDD26-18N1B V = 2x1800 V RRM Standard Rectifier Module I = 36 A FAV V = 1.05 V F Phase leg Part number MDD26-18N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA Package with DCB ceramic Diode for main rectification Isolation Voltage: V~ 4800 Improved temperature and power cycling For single and three phase Industry standard outline Planar passivated chips bridge configurations RoHS compliant Very low forward voltage drop Supplies for DC power equipment Height: 30 mm Very low leakage current Input rectifiers for PWM inverter Base plate: DCB ceramic Battery DC power supplies Reduced weight Field supply for DC motors Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d 2020 IXYS all rights reservedMDD26-18N1B Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 8 0 0 V T = 25C 100 A R VJ R V = 1 8 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 4 0 A T = 25C 1.13 V F F VJ I = 8 0 A 1.38 V F T = C 1.05 V I = 4 0 A 125 F VJ I = 8 0 A 1.27 V F average forward current T = 1 0 0 C T = 1 5 0 C 36 A I FAV C VJ RMS forward current I 180 sine 60 A F(RMS) V T = 1 5 0 C 0.80 V threshold voltage F0 VJ for power loss calculation only slope resistance r 6.1 m F thermal resistance junction to case 1 K/W R thJC thermal resistance case to heatsink K/W R 0.2 thCH P total power dissipation T = 25C 125 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 650 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 700 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 555 VJ t = 8,3 ms (60 Hz), sine V = 0 V 595 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 2.12 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 2.04 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 1.54 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.48 kAs R V = 4 0 0 V f = 1 MHz T = 25C 27 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d 2020 IXYS all rights reserved