X-On Electronics has gained recognition as a prominent supplier of MDD44-12N1B Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MDD44-12N1B Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MDD44-12N1B IXYS

MDD44-12N1B electronic component of IXYS
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Part No.MDD44-12N1B
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 44 Amps 1200V
Datasheet: MDD44-12N1B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 24.343 ea
Line Total: USD 24.34 
Availability - 11
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 24.343
10 : USD 23.881
36 : USD 18.535

   
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RoHS - XON
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Vr - Reverse Voltage
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We are delighted to provide the MDD44-12N1B from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDD44-12N1B and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MDD44-12N1B V = 2x1200 V RRM Standard Rectifier Module I = 59 A FAV V = 1.26 V F Phase leg Part number MDD44-12N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA Package with DCB ceramic Diode for main rectification Isolation Voltage: V~ 4800 Improved temperature and power cycling For single and three phase Industry standard outline Planar passivated chips bridge configurations RoHS compliant Very low forward voltage drop Supplies for DC power equipment Height: 30 mm Very low leakage current Input rectifiers for PWM inverter Base plate: DCB ceramic Battery DC power supplies Reduced weight Field supply for DC motors Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d 2020 IXYS all rights reservedMDD44-12N1B Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 2 0 0 V T = 25C 100 A R VJ R V = 1 2 0 0 V T = 1 5 0 C 10 mA R VJ forward voltage drop V I = 1 0 0 A T = 25C 1.30 V F F VJ I = 2 0 0 A 1.60 V F T = C 1.26 V I = 1 0 0 A 125 F VJ I = 2 0 0 A 1.67 V F average forward current T = 1 0 0 C T = 1 5 0 C 59 A I FAV C VJ RMS forward current I 180 sine 100 A F(RMS) V T = 1 5 0 C 0.80 V threshold voltage F0 VJ for power loss calculation only slope resistance r 4.3 m F thermal resistance junction to case 0.59 K/W R thJC thermal resistance case to heatsink K/W R 0.2 thCH P total power dissipation T = 25C 212 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 1.15 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.24 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C A 980 VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.06 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 6.62 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 6.40 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 4.80 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 4.63 kAs R V = 4 0 0 V f = 1 MHz T = 25C 27 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d 2020 IXYS all rights reserved

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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