The MDD56-12N1B is a 1200V, 56A Insulated Gate Bipolar Transistor (IGBT) from IXYS Corporation. It features Ultra-fast switching speeds, high blocking voltage, and low on-state voltage. Additionally, the device has temperature-independent behavior, low EMI noise, and positive temperature coefficient on-state characteristics. Additional features include turn-on losses, turn-off losses, short-circuit safe operation, voltage current limiter and soft-start capability. It is suitable for use in a wide range of applications, including motor control, solar inverters, and welding machines.