MDMA900U1600PTEH 3~ Standard Rectifier Module Rectifier V = 1600 V RRM I 900 A = DAV A I = 8000 FSM 3~ Rectifier Bridge + NTC Part number MDMA900U1600PTEH Backside: isolated 1-11 12-22 60 47-53 39-45 31-37 61 54-58 23-30 Features / Advantages: Applications: Package: E3-Pack Package with DCB ceramic Diode for main rectification Isolation Voltage: V~ 3600 Improved temperature and power cycling For three phase bridge configurations Industry standard outline Planar passivated chips Supplies for DC power equipment RoHS compliant Very low forward voltage drop Input rectifiers for PWM inverter PressFit-Pins for PCB mounting Very low leakage current Battery DC power supplies Height: 17 mm Field supply for DC motors Base plate: Copper internally DCB isolated Advanced power cycling Phase Change Material available Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g 2019 IXYS all rights reservedMDMA900U1600PTEH Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1600 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 6 0 0 V T = 25C 200 A R VJ R V = 1 6 0 0 V T = 1 5 0 C 5 mA R VJ forward voltage drop V I = 3 0 0 A T = 25C 1.27 V F F VJ I = 9 0 0 A 1.92 V F T = C 1.19 V I = 3 0 0 A 125 F VJ I = 9 0 0 A 1.94 V F bridge output current T = 8 5 C T = 1 5 0 C 900 A I DAV C VJ rectangular d = V T = 1 5 0 C 0.78 V threshold voltage F0 VJ for power loss calculation only slope resistance r 1.3 m F thermal resistance junction to case 0.1 K/W R thJC thermal resistance case to heatsink 0.05 K/W R thCH P total power dissipation T = 25C 1250 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 8.00 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 8.64 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C kA 6.80 VJ t = 8,3 ms (60 Hz), sine V = 0 V 7.35 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 320.0 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 310.5 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 231.2 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 224.4 kAs R V = 4 0 0 V f = 1 MHz T = 25C 343 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g 2019 IXYS all rights reserved