MDNA360UB2200PTED 3~ Brake High Voltage Standard Rectifier Module Rectifier Chopper V = 2200 V V = 1700 V RRM CES I 360 A I 200 A = = DAV C25 A V I = 1900 V = 2.1 FSM CE(sat) 3~ Rectifier Bridge + Brake Unit + NTC Part number MDNA360UB2200PTED Backside: isolated 40-43 21-22 32 12-14 17-19 7-9 2-4 33 47-50 23-25 29 28 Features / Advantages: Applications: Package: E2-Pack Brake with Infineon IGBT 3~ Rectifier with brake unit Isolation Voltage: V~ 3600 for drive inverters Industry standard outline RoHS compliant PressFit-Pins for PCB mounting Height: 17 mm Base plate: Copper internally DCB isolated Advanced power cycling Phase Change Material available Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g 2019 IXYS all rights reservedMDNA360UB2200PTED Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 2300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 2200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 2 2 0 0 V T = 25C 100 A R VJ R V = 2 2 0 0 V T = 1 5 0 C 3 mA R VJ forward voltage drop V I = 1 2 0 A T = 25C 1.25 V F F VJ I = 3 6 0 A 1.80 V F T = C 1.23 V I = 1 2 0 A 125 F VJ I = 3 6 0 A 1.98 V F bridge output current T = 8 5 C T = 1 5 0 C 360 A I DAV C VJ rectangular d = V T = 1 5 0 C 0.82 V threshold voltage F0 VJ for power loss calculation only slope resistance r 3.4 m F thermal resistance junction to case 0.25 K/W R thJC thermal resistance case to heatsink 0.1 K/W R thCH P total power dissipation T = 25C 500 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 1.90 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 2.05 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C kA 1.62 VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.75 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 18.1 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 17.5 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 13.0 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 12.7 kAs R V = 4 0 0 V f = 1 MHz T = 25C 73 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g 2019 IXYS all rights reserved