X-On Electronics has gained recognition as a prominent supplier of MDO500-12N1 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MDO500-12N1 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MDO500-12N1 IXYS

MDO500-12N1 electronic component of IXYS
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Part No.MDO500-12N1
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 500 Amps 1200V
Datasheet: MDO500-12N1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 127.9368 ea
Line Total: USD 127.94 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 127.9368
6 : USD 123.5304

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 178.7204

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 150.5046

   
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We are delighted to provide the MDO500-12N1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDO500-12N1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MDO500-12N1 V = 1200 V RRM Standard Rectifier Module I = 560 A FAV V = 0.98 V F Single Diode Part number MDO500-12N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 Planar passivated chips Diode for main rectification Isolation Voltage: V~ 3600 Very low leakage current For single and three phase Industry standard outline Very low forward voltage drop bridge configurations RoHS compliant Improved thermal behaviour Supplies for DC power equipment Base plate: Copper Input rectifiers for PWM inverter internally DCB isolated Battery DC power supplies Advanced power cycling Field supply for DC motors Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204c 2019 IXYS all rights reservedMDO500-12N1 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 2 0 0 V T = 25C 1 mA R VJ R V = 1 2 0 0 V T = 1 4 0 C 30 mA R VJ forward voltage drop V I = 5 0 0 A T = 25C 1.09 V F F VJ I = 1 0 0 0 A 1.24 V F T = C 0.98 V I = 5 0 0 A 125 F VJ I = 1 0 0 0 A 1.17 V F average forward current T = 8 5 C T = 1 4 0 C 560 A I FAV C VJ RMS forward current I 180 sine d = 0.5 A F(RMS) V T = 1 4 0 C 0.80 V threshold voltage F0 VJ for power loss calculation only slope resistance r 0.38 m F thermal resistance junction to case 0.072 K/W R thJC thermal resistance case to heatsink 0.024 K/W R thCH P total power dissipation T = 25C 1600 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 15.0 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 16.2 kA R t = 10 ms (50 Hz), sine T = 1 4 0 C kA 12.8 VJ t = 8,3 ms (60 Hz), sine V = 0 V 13.8 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 1.13 MAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.09 MAs R t = 10 ms (50 Hz), sine T = 1 4 0 C 812.8 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 788.8 kAs R V = 4 0 0 V f = 1 MHz T = 25C 762 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204c 2019 IXYS all rights reserved

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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