MDO500-18N1 IXYS

MDO 500 I = 880 A High Power FRMS I = 560 A FAVM Diode Modules V = 1200-2200 V RRM 3 32 V V Type RSM RRM 2 V V DSM DRM VV 1300 1200 MDO 500-12N1 1500 1400 MDO 500-14N1 1700 1600 MDO 500-16N1 1900 1800 MDO 500-18N1 2100 2000 MDO 500-20N1 2300 2200 MDO 500-22N1 Symbol Test Conditions Maximum Ratings Features International standard package I T = T 880 A FRMS VJ VJM Direct copper bonded Al O -ceramic 2 3 I T = 85 C 180 sine 560 A FAVM C with copper base plate I T = 45 C t = 10 ms (50 Hz) 15000 A Planar passivated chips FSM VJ V = 0 t = 8.3 ms (60 Hz) A 16000 Isolation voltage 3600 V~ R UL registered E 72873 T = T t = 10 ms (50 Hz) 13000 A VJ VJM V = 0 t = 8.3 ms (60 Hz) 14400 A R Applications 2 2 I t T = 45 C t = 10 ms (50 Hz) 1125000 A s Supplies for DC power equipment VJ 2 1062000 V = 0 t = 8.3 ms (60 Hz) A s DC supply for PWM inverter R Field supply for DC motors 2 T = T t = 10 ms (50 Hz) 845000 A s VJ VJM Battery DC power supplies 2 V = 0 t = 8.3 ms (60 Hz) 813000 A s R Advantages T -40...140 C VJ Simple mounting T 140 C VJM Improved temperature and power T -40...125 C stg cycling V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Reduced protection circuits 3600 I 1 mA t = 1 s V~ ISOL M Mounting torque (M6) 4.5-7/40-62 Nm/lb.in. d Dimensions in mm (1 mm = 0.0394 ) Terminal connection torque (M8) 11-13/97-115 Nm/lb.in. Weight Typical including screws 650 g Symbol Test Conditions Characteristic Values I T = T V = V 30 mA RRM VJ VJM R RRM V I = A T1200 = 25 CV1.3 F F VJ V For power-loss calculations only (T = T)V0.8 T0 VJ VJM r m 0.38 T R DC current 0.072 K/W thJC R DC current 0.096 K/W thJK d Creeping distance on surface 21.7 mm S d Creepage distance in air 9.6 mm A 2 a Maximum allowable acceleration m/s 50 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 3MDO 500 7 14000 10 1000 2 V = 0V I I t R TSM 900A DC I 12000A FAVM 180 sin 2 A s 800 50 Hz 120 80 % V 60 RRM 10000 700 T = 45C 30 VJ T = 140C VJ 600 8000 T = 45C VJ 6 10 500 6000 400 T = 140C VJ 300 4000 200 2000 100 5 0 10 0 0.001 0.01 0.1 s 1110 0 25 50 75 100 125 C150 ms t t T C 2 Fig. 1 Surge overload current Fig. 2 I t versus time (1-10 ms) Fig. 3 Maximum forward current I : Crest value, t: duration at case temperature FSM 1200 Fig. 4 Power dissipation versus P tot R K/W thKA W forward current and ambient 0.03 temperature 1000 0.07 0.12 0.2 800 0.3 0.4 0.6 600 DC 180 sin 120 400 60 30 200 0 0 200 400 600 800 A 0 25 50 75 100 125C 150 T I A FAVM 3200 Fig. 5 Single phase rectifier bridge: W R K/W RL thKA Power dissipation versus direct 2800 0.015 output current and ambient P tot 0.03 temperature 2400 0.04 R = resistive load 0.05 0.07 L = inductive load 2000 0.01 0.14 1600 1200 Circuit B2 800 4xMDO500 400 0 C 0 300 600 900 1200 A 0 25 50 75 100 125 150 T I A dAVM 2000 IXYS All rights reserved 2 - 3