MEA300-06DA IXYS

MEA 300-06 DA V = 600 V Fast Recovery RRM MEK 300-06 DA I = 304 A Epitaxial Diode FAVM MEE 300-06 DA t = 250 ns rr (FRED) Module Preliminary data 3 V V Type 2 RSM RRM 1 V V MEA 300-06DA MEK 300-06DA MEE 300-06DA 12 3 1 2 3 1 2 3 600 600 Symbol Test Conditions Maximum Ratings I T = 75 C 430 A FRMS C Features I T = 75 C rectangular, d = 0.5 304 A FAVM C International standard package I t < 10 s rep. rating, pulse width limited by T 1640 A FRM P VJM with DCB ceramic base plate I T = 45 C t = 10 ms (50 Hz), sine 2400 A FSM VJ Planar passivated chips t = 8.3 ms (60 Hz), sine 2640 A Short recovery time 2160 T = 150 C t = 10 ms (50 Hz), sine A VJ Low switching losses t = 8.3 ms (60 Hz), sine 2380 A Soft recovery behaviour 2 2 28800 I t T = 45 C t = 10 ms (50 Hz), sine A s VJ Isolation voltage 3600 V~ 2 29300 t = 8.3 ms (60 Hz), sine A s UL registered E 72873 2 T = 150 C t = 10 ms (50 Hz), sine 23300 A s VJ 2 Applications t = 8.3 ms (60 Hz), sine 23800 A s Antiparallel diode for high frequency T -40...+150 C VJ switching devices T -40...+125 C stg Free wheeling diode in converters 110 T C Smax and motor control circuits P T = 25 CW875 tot C Inductive heating and melting V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Uninterruptible power supplies (UPS) I 1 mA t = 1 s V~ 3600 ISOL Ultrasonic cleaners and welders M Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in. d Terminal connection torque (M6) 4.50-5.50/40-48 Nm/lb.in. Advantages High reliability circuit operation d Creeping distance on surface 12.7 mm S Low voltage peaks for reduced d Strike distance through air 9.6 mm A 2 a Maximum allowable acceleration 50 m/s protection circuits Low noise switching Weight 150 g Low losses Symbol Test Conditions Characteristic Values (per diode) typ. max. Dimensions in mm (1 mm = 0.0394 ) I T = 25 CV = V mA 12 R VJ R RRM T = 25 CV = 0.8 V 3 mA VJ R RRM T = 125 CV = 0.8 V 80 mA VJ R RRM V I = A 150 T = 125 CV1.05 F F VJ 1.27 T =25 CV VJ I = A 260 T = 125 CV1.19 F VJ T =25 CV1.36 VJ V For power-loss calculations only 0.85 V T0 r 1.34 m T R DC current 0.228 K/W thJH R DC current 0.143 K/W thJC t I = A300 T = 100 Cn250 300s rr F VJ 300 44 I V = V T = 25 CA RM R VJ -di/dt = A/400 sT = 100 CA66 VJ I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 749MEA 300-06 DA MEE 300-06 DA MEK 300-06 DA 500 20 200 T = 100C T = 100C VJ VJ V = 300V V = 300V A R R C A I RM 400 Q 15 150 r I F 300 I = 600A I = 600A F F I = 300A I = 300A 10 100 F F I = 150A I = 150A T =125C F F VJ 200 T =25C VJ 5 50 100 0 0 0 0.0 0.4 0.8 1.2 V 1.6 100 A/ms 1000 0 200 400 600 A/800ms 1000 -di /dt -di /dt V F F F Fig. 1 Forward current I versus Fig. 2 Typ. reverse recovery Fig. 3 Typ. peak reverse current I F RM max. voltage drop V per leg charge Q versus -di /dt versus -di /dt F r F F 1.4 400 60 3.0 T = 100C VJ T = 100C VJ V V = 300V s I = 300A R t F ns fr 50 2.5 1.2 V 350 FR t K fr t f rr 40 2.0 1.0 V I = 600A FR F I = 300A 300 30 1.5 F I = 150A F 0.8 I RM 20 1.0 250 Q r 0.6 10 0.5 0.4 200 0 0.0 0 40 80 120 C 160 0 200 400 600 800 1000 0 200 400 600 A/800ms 1000 A/ms -di /dt di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Typ. recovery time t Fig. 6 Typ. peak forward voltage V r RM rr FR versus junction temperature T versus -di /dt and t versus di /dt VJ F fr F 0.25 Constants for Z calculation: thJS K/W iR (K/W) t (s) thi i 0.20 1 0.002 0.08 2 0.008 0.024 0.15 3 0.054 0.112 Z Z thJH 4 0.164 0.464 thJS 0.10 0.05 0.00 0.001 0.01 0.1 1 10 s t Fig. 7 Transient thermal impedance junction to heatsink 2000 IXYS All rights reserved 2 - 2 814