MEA 250-12 DA V = 1200 V Fast Recovery RRM MEK 250-12 DA I = 260 A Epitaxial Diode FAVM MEE 250-12 DA t = 450 ns rr (FRED) Module Preliminary data 3 2 V V Type 1 RSM RRM MEA 250-12DA MEK 250-12DA MEE 250-012DA V V 12 3 1 2 3 1 2 3 1200 1200 Symbol Test Conditions Maximum Ratings Features I T = 75 CA367 FRMS C International standard package 75 260 I T = C rectangular, d = 0.5 A FAVM C I t < 10 s rep. rating, pulse width limited by T 1480 A with DCB ceramic base plate FRM P VJM Planar passivated chips I T = 45 C t = 10 ms (50 Hz), sine 2400 A FSM VJ Short recovery time t = 8.3 ms (60 Hz), sine 2640 A Low switching losses T = 150 C t = 10 ms (50 Hz), sine 2160 A VJ Soft recovery behaviour 2380 t = 8.3 ms (60 Hz), sine A Isolation voltage 3600 V~ 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 28800 A s VJ UL registered E 72873 2 29300 t = 8.3 ms (60 Hz), sine A s 2 T = 150 C t = 10 ms (50 Hz), sine 23300 A s Applications VJ 2 t = 8.3 ms (60 Hz), sine 23800 A s Antiparallel diode for high frequency switching devices -40...+150 T C VJ T -40...+125 C Free wheeling diode in converters stg 110 T C and motor control circuits Smax Inductive heating and melting P T = 25 CW875 tot c Uninterruptible power supplies (UPS) V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Ultrasonic cleaners and welders I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in. Advantages d Terminal connection torque (M6) 4.50-5.50/40-48 Nm/lb.in. High reliability circuit operation d Creeping distance on surface 12.7 mm Low voltage peaks for reduced S d Strike distance through air 9.6 mm protection circuits A 2 a Maximum allowable acceleration 50 m/s Low noise switching Weight 150 g Low losses Symbol Test Conditions Characteristic Values (per diode) typ. max. Dimensions in mm (1 mm = 0.0394 ) I T = 25 CV = V 12 mA R VJ R RRM T = 25 CV = 0.8 V mA 3 VJ R RRM T = 125 CV = 0.8 V 60 mA VJ R RRM V I = A 150 T = 125 CV1.38 F F VJ T =25 CV1.69 VJ 260 1.54 I = A T = 125 CV F VJ T =25 CV1.80 VJ V For power-loss calculations only 1.16 V T0 r 1.46 m T R DC current 0.228 K/W thJH R DC current 0.143 K/W thJC t I = A300 T = 100 Cn450 500s rr F VJ 600 55 I V = V T = 25 CA RM R VJ -di/dt = A/400 sT = 100 CA83 VJ I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 749MEA 250-12 DA MEE 250-12 DA MEK 250-12 DA 500 80 200 T = 100C T = 100C A VJ A C VJ 450 V = 600V 180 V = 600V R R 70 400 160 I I = 300A max. Q RM 60 F r I = 300A max. I F I = 300A typ. F 350 140 F I = 300A typ. I = 250A typ. F F 50 300 I = 250A typ. 120 F I = 125A typ. F I = 125A typ. T =125C F VJ 250 40 100 T = 25C VJ 200 80 30 150 60 20 100 40 10 50 20 0 0 0 0.00.5 1.01.5 2.02V.5 100 A/ms 1000 0 200 400 600 A/800ms 1000 -di /dt -di /dt V F F F Fig. 1 Forward current I versus Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F r RM voltage drop V per leg versus -di /dt versus -di /dt F F F 1.4 1200 100 2.5 T = 125C T = 100C A V VJ VJ ns 90 I = 260A V = 600V s F R 1.2 1000 K 80 2.0 f V t t FR fr V rr t FR fr 70 I = 300A max. 1.0 800 F I = 300A typ. F 60 1.5 I = 250A typ. F 0.8 600 I = 125A typ. 50 F I RM 40 1.0 0.6 400 Q 30 r 20 0.5 0.4 200 10 0.2 0 0 0.0 0 40 80 120 C 160 0 200 400 600 800 1000 0 400 800 1200 A/ms A/ms -di /dt di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus junction temperature T versus di /dt VJ F Constants for Z calculation: 0.25 thJS K/W iR (K/W) t (s) thi i 0.20 1 0.002 0.08 Z Z thJH 2 0.008 0.024 thJS 3 0.054 0.112 0.15 4 0.164 0.464 0.10 0.05 0.00 0.001 0.01 0.1 1 10 s t Fig. 7 Transient thermal impedance junction to heatsink 2000 IXYS All rights reserved 2 - 2