MEA 75-12 DA V = 1200 V Fast Recovery RRM MEK 75-12 DA I = 75 A Epitaxial Diode FAV MEE 75-12 DA t = 250 ns rr (FRED) Module Preliminary data 3 TO-240 AA 2 1 V V Type RSM RRM V V MEA75-12 DA MEK 75-12 DA MEE 75-12 DA 1200 1200 12 3 1 2 3 1 2 3 Symbol Test Conditions Maximum Ratings Features I T = 75 CA107 FRMS case International standard package I T = 75 C rectangular, d = 0.5 75 A FAV case with DCB ceramic base plate I t < 10 s rep. rating, pulse width limited by T A TBD FRM P VJM Planar passivated chips I T = 45C t = 10 ms (50 Hz), sine 1200 A FSM VJ Short recovery time t = 8.3 ms (60 Hz), sine A 1300 Low switching losses T = 150C t = 10 ms (50 Hz), sine 1080 A VJ Soft recovery behaviour t = 8.3 ms (60 Hz), sine 1170 A Isolation voltage 3600 V~ 2 2 I t T = 45C t = 10 ms (50 Hz), sine 7200 A s VJ UL registered E 72873 2 t = 8.3 ms (60 Hz), sine 7100 A s 2 Applications T = 150C t = 10 ms (50 Hz), sine 5800 A s VJ 2 Antiparallel diode for high frequency t = 8.3 ms (60 Hz), sine 5700 A s switching devices T -40...+150 C VJ Free wheeling diode in converters T -40...+125 C stg and motor control circuits T 110 C Hmax Inductive heating and melting P T = 25CW280 tot case Uninterruptible power supplies (UPS) V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Ultrasonic cleaners and welders I 1 mA t = 1 s 3600 V~ ISOL Advantages M Mounting torque (M5) 2.50-4/22-35 Nm/lb.in. d Terminal connection torque (M5) 2.50-4/22-35 Nm/lb.in. High reliability circuit operation Low voltage peaks for reduced d Creep distance on surface 12.7 mm S protection circuits d Strike distance through air 9.6 mm A 2 a Maximum allowable acceleration 50 m/s Low noise switching Low losses 90 Weight g Symbol Test Conditions Characteristic Values (per diode) typ. max. Dimensions in mm (1 mm = 0.0394 ) I T = 25CV = V 2 mA R VJ R RRM T = 25CV = 0.8 V 0.5 mA VJ R RRM T = 125CV = 0.8 V 34 mA VJ R RRM V I = A 100 T = 125CV1.85 F F VJ T =25CV2.17 VJ I = A 300 T = 125CV2.58 F VJ T =25CV2.64 VJ V For power-loss calculations only 1.48 V T0 r m 3.65 T R DC current 0.550 K/W thJH R DC current 0.450 K/W thJC t I = A T = 100Cns 150 250 300 rr F VJ I V = V600 T = 25CA22 RM R VJ -di/dt = A/sT = 100CA 200 33 VJ Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved D6 - 5 015MEA 75-12 DA MEE 75-12 DA MEK 75-12 DA 200 10 100 T = 100C T = 100C A VJ VJ A C V = 600V V = 600V 175 R R I = 150A F 8 80 I = 100A Q I 150 r F RM I F I = 70A F I = 150A T =125C F VJ 125 I = 100A 6 60 T = 25C F VJ I = 70A F 100 4 40 75 50 2 20 25 0 0 0 0123V 10 100 1000 0 200 400 600 A/800 s 1000 A/ s V -di /dt -di /dt F F F Fig. 1 Forward current I versus Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F r RM voltage drop V per leg versus -di /dt versus -di /dt F F F 1.4 350 100 2.0 T = 100C VJ s A V = 600V ns R V FR 1.2 80 1.6 V FR t 300 fr t fr K t f rr 1.0 60 1.2 I = 150A F I = 100A 250 F I I = 70A RM F 0.8 40 0.8 Q r 200 0.6 20 0.4 T = 100C VJ I = 150A F 0.4 150 0 0.0 0 50 100 150 0 200 400 600 800 1000 0 200 400 600 800 1000 C A/ s A/ s -di /dt di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus junction temperature T versus di /dt VJ F 0.6 K/W 0.5 0.4 Z thJH Constants for Z calculation: 0.3 thJH iR (K/W) t (s) thi i 0.2 1 0.037 0.002 2 0.138 0.134 0.1 3 0.093 0.25 4 0.282 0.274 75-12 DA 0.0 0.001 0.01 0.1 1 10 s t Fig. 7 Transient thermal impedance junction to heatsink 2000 IXYS All rights reserved D6 - 6 016