MEA 95-06 DA V = 600 V Fast Recovery RRM MEK 95-06 DA I = 95 A Epitaxial Diode FAV MEE 95-06 DA t = 250 ns rr (FRED) Module TO-240 AA 3 V V Type RSM RRM 2 1 V V MEA95-06 DA MEK 95-06 DA MEE 95-06 DA 12 3 1 2 3 1 2 3 600 600 Symbol Test Conditions Maximum Ratings I T = CA 75 142 FRMS case I T = C rectangular, d = 0.5 A 75 95 FAV case Features I t < 10 s rep. rating, pulse width limited by T TBD A FRM P VJM International standard package 1200 I T = 45 C t = 10 ms (50 Hz), sine A FSM VJ with DCB ceramic base plate 1300 t = 8.3 ms (60 Hz), sine A Planar passivated chips T = 150 C t = 10 ms (50 Hz), sine 1080 A VJ Short recovery time t = 8.3 ms (60 Hz), sine 1170 A Low switching losses 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 7200 A s VJ Soft recovery behaviour 2 t = 8.3 ms (60 Hz), sine 7100 A s Isolation voltage 3600 V~ 2 T = 150 C t = 10 ms (50 Hz), sine 5800 A s VJ UL registered E 72873 2 t = 8.3 ms (60 Hz), sine 5700 A s Applications T -40...+150 C VJ Antiparallel diode for high frequency T -40...+125 C stg T 110 C switching devices Hmax Free wheeling diode in converters P T = 25 CW280 tot case and motor control circuits V 50/60 Hz, RMS t = 1 min V~ 3000 ISOL Inductive heating and melting I 1 mA t = 1 s 3600 V~ ISOL Uninterruptible power supplies (UPS) M Mounting torque (M5) 2.5-4/22-35 Nm/lb.in. d Ultrasonic cleaners and welders Terminal connection torque (M5) 2.5-4/22-35 Nm/lb.in. Advantages d Creep distance on surface 12.7 mm S d Strike distance through air 9.6 mm High reliability circuit operation A 2 a Maximum allowable acceleration 50 m/s Low voltage peaks for reduced protection circuits 90 Weight g Low noise switching Symbol Test Conditions Characteristic Values (per diode) Low losses typ. max. I T = 25 CV = V 2 mA R VJ R RRM Dimensions in mm (1 mm = 0.0394 ) T = 25 CV = 0.8 V 0.5 mA VJ R RRM T = 125 CV = 0.8 V 34 mA VJ R RRM V I = A 100 T = 125 CV1.36 F F VJ T =25 CV 1.55 VJ I = A 300 T = 125 CV2.05 F VJ T =25 CV2.09 VJ V For power-loss calculations only 1.01 V T0 r T = 125C 2.85 m T VJ R DC current 0.550 K/W thJH R DC current 0.450 K/W thJC t I =A100 T = 100 Cn250 300s rr F VJ I V =V300 T = 25 CA14 RM R VJ -di/dt = 200 A/ sT = 100 CA21 VJ I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAV VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 749MEA 95-06 DA MEE 95-06 DA MEK 95-06 DA 200 4 60 T = 100C T = 100C A A VJ VJ V = 300V V = 300V 175 R R C 50 I Q RM 150 3 r I F I =190A F 40 I = 95A 125 F I =47.5A T =150C I =190A F VJ F 100 T =100C 2 I = 95A 30 VJ F T =25C I =47.5A VJ F 75 20 50 1 10 25 0 0 0 0.00.5 1.01.5 V 2.0 10 100 1000 0 200 400 600 A/800ms 1000 A/ms V -di /dt -di /dt F F F Fig. 1 Forward current I versus Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F r RM voltage drop V per leg versus -di /dt versus -di /dt F F F 2.0 250 50 1.0 T = 100C T = 100C VJ A VJ ns s V = 300V I = 150A R F V FR 40 0.8 V t FR 1.5 rr 200 t fr t Q fr r I =190A K f F I = 95A F 30 0.6 I =47.5A I F RM 1.0 150 20 0.4 0.5 100 10 0.2 0.0 50 0 0.0 0 50 100 150 0 200 400 600 800 1000 0 200 400 600 800 1000 C A/ms A/ms -di /dt di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus junction temperature T versus di /dt VJ F 0.6 K/W 0.5 0.4 Z thJH Constants for Z calculation: 0.3 thJH iR (K/W) t (s) thi i 0.2 1 0.037 0.002 2 0.138 0.134 0.1 3 0.093 0.25 4 0.282 0.274 0.0 0.001 0.01 0.1 1 10 s t Fig. 7 Transient thermal impedance junction to heatsink 2000 IXYS All rights reserved 2 - 2