MEK 350-02 DA V = 200 V Fast Recovery RRM I = 356 A Epitaxial Diode FAVM t = 150 ns rr (FRED) Module 3 12 3 2 V V Type RSM RRM 1 V V 200 200 MEK 350-02DA Symbol Test Conditions Maximum Ratings Features I T = 75 CA503 FRMS C International standard package I T = 75 C rectangular, d = 0.5 356 A FAVM C I t < 10 s rep. rating, pulse width limited by T A 1800 with DCB ceramic base plate FRM P VJM Planar passivated chips I T = 45 C t = 10 ms (50 Hz), sine A 2400 FSM VJ Short recovery time t = 8.3 ms (60 Hz), sine 2640 A Low switching losses T = 150 C t = 10 ms (50 Hz), sine 2160 A VJ Soft recovery behaviour t = 8.3 ms (60 Hz), sine 2380 A Isolation voltage 3600 V~ 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 28800 A s VJ UL registered E 72873 2 t = 8.3 ms (60 Hz), sine 29300 A s 2 T = 150 C t = 10 ms (50 Hz), sine 23300 A s Applications VJ 2 t = 8.3 ms (60 Hz), sine 23800 A s Antiparallel diode for high frequency switching devices T -40...+150 C VJ T C -40...+125 Free wheeling diode in converters stg T 110 C and motor control circuits Smax Inductive heating and melting P T = 25 CW875 tot C Uninterruptible power supplies (UPS) V 50/60 Hz, RMS t = 1 min V~ 3000 ISOL Ultrasonic cleaners and welders I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M6) Nm/lb.in. 2.25-2.75/20-25 d Advantages Terminal connection torque (M6) Nm/lb.in. 4.50-5.50/40-48 High reliability circuit operation d Creeping distance on surface 12.7 mm Low voltage peaks for reduced S d Strike distance through air mm 9.6 protection circuits A 2 a Maximum allowable acceleration 50 m/s Low noise switching Weight g 150 Low losses Symbol Test Conditions Characteristic Values (per diode) Dimensions in mm (1 mm = 0.0394 ) typ. max. I T = 25 CV = V mA 3 R VJ R RRM T = 25 CV = 0.8 V mA 2 VJ R RRM T = 125 CV = 0.8 V mA 80 VJ R RRM V I = A 150 T = 125 CV0.80 F F VJ T =25 CV0.98 VJ I = A 260 T = 125 CV0.92 F VJ T =25 CV 1.07 VJ V For power-loss calculations only V 0.53 T0 r 1.29 m T R DC current K/W 0.228 thJH R DC current 0.143 K/W thJC t I = A T = 100 Cns 300 150 200 rr F VJ I V = V100 T = 25 CA9 RM R VJ -di/dt = A/200 sT = 100 CA15 VJ I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 911 MEK 350-02 DA 400 3.0 60 T = 100C T = 100C A VJ VJ A C V = 100V V = 100V 350 R R 2.5 50 I Q RM 300 r I F I = 700A F 2.0 40 I = 350A 250 F I = 175A T =125C I = 700A F VJ F 200 T =25C 1.5 I = 350A 30 VJ F I = 175A F 150 1.0 20 100 0.5 10 50 0 0.0 0 0.0 0.4 0.8 1.2 V 10 100 1000 0 200 400 600 A/800ms 1000 A/ms V -di /dt -di /dt F F F Fig. 1 Forward current I versus Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F r RM voltage drop V per leg versus -di /dt versus -di /dt F F F 2.0 280 100 4.5 T = 125C T = 100C s VJ VJ ns 90V I = 350A V = 100V 4.0 F R t fr 240 80 3.5 V t FR 1.5 rr t fr Q 70 r I = 700A K f F 3.0 V FR I = 350A F 200 60 I = 175A I 2.5 F RM 1.0 50 2.0 160 40 1.5 30 0.5 1.0 120 20 0.5 10 0.0 80 0 0.0 0 50 100 150 0 200 400 600 800 1000 0 400 800 1200 C A/ms A/ms -di /dt di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus junction temperature T versus di /dt VJ F Constants for Z calculation: 0.25 thJS K/W iR (K/W) t (s) thi i 0.20 1 0.002 0.08 2 0.008 0.024 3 0.054 0.112 0.15 4 0.164 0.464 ZZ thJH thJS 0.10 0.05 0.00 0.001 0.01 0.1 1 10 s t Fig. 7 Transient thermal impedance junction to heatsink 2000 IXYS All rights reserved 2 - 2