MEO 450-12 DA V = 1200 V Fast Recovery RRM I = 453 A Epitaxial Diode FAVM t = 450 ns rr (FRED) Module Preliminary data 3 3 1 1 V V Type RSM RRM V V 1200 1200 MEO 450-12DA Symbol Test Conditions Maximum Ratings I T = 75 CA640 Features FRMS C I T = 75 C rectangular, d = 0.5 453 A International standard package FAVM C I t < 10 s rep. rating, pulse width limited by T 2460 A with DCB ceramic base plate FRM P VJM Planar passivated chips I T = 45 C t = 10 ms (50 Hz), sine 4800 A FSM VJ t = 8.3 ms (60 Hz), sine 5280 A Short recovery time Low switching losses T = 150 C t = 10 ms (50 Hz), sine 4320 A VJ 4750 Soft recovery behaviour t = 8.3 ms (60 Hz), sine A Isolation voltage 3600 V~ 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 115200 A s VJ 2 UL registered E 72873 117100 t = 8.3 ms (60 Hz), sine A s 2 93300 T = 150 C t = 10 ms (50 Hz), sine A s VJ Applications 2 t = 8.3 ms (60 Hz), sine 94800 A s Antiparallel diode for high frequency -40...+150 T C switching devices VJ T -40...+125 C Free wheeling diode in converters stg T 110 C Smax and motor control circuits P T = 25 CW1750 Inductive heating and melting tot C Uninterruptible power supplies (UPS) V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Ultrasonic cleaners and welders I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in. d Advantages Terminal connection torque (M6) 4.50-5.50/40-48 Nm/lb.in. High reliability circuit operation d Creeping distance on surface mm 12.7 S Low voltage peaks for reduced d Strike distance through air 9.6 mm A protection circuits 2 a Maximum allowable acceleration 50 m/s Low noise switching Weight 150 g Low losses Symbol Test Conditions Characteristic Values (per diode) typ. max. Dimensions in mm (1 mm = 0.0394 ) I T = 25 CV = V 24 mA R VJ R RRM T = 25 CV = 0.8 V mA 6 VJ R RRM T = 125 CV = 0.8 V 120 mA VJ R RRM V I = A 300 T = 125 CV1.51 F F VJ T =25 CV1.78 VJ 520 1.76 I = A T = 125 CV F VJ T =25 CV1.96 VJ V For power-loss calculations only 1.16 V T0 r 1.15 m T R DC current 0.114 K/W thJH R DC current 0.071 K/W thJC t I = 600 A T = 100 Cn450 500s rr F VJ I V=V600 T = 25 CA110 RM R VJ -di/dt = A/800 sT = 100 CA165 VJ I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 749MEO 450-12 DA 800 120 200 T = 100C A A VJ C T = 100C 180 VJ V = 600V 700 R V = 600V R 100 160 max. I max. Q RM 600 r I F 140 I =600A F 80 I =600A F 500 I =600A F 120 I =600A F I =450A F I =450A F I =225A 400 60 100 F I =225A F typ. 80 300 40 T =125C VJ 60 typ. 200 40 T =25C VJ 20 100 20 0 0 0 0.0 0.5 1.0 1.5 2.0 V 2.5 100 1000 0 200 400 600 A/800ms 1000 A/ms V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di / dt versus -di / dt F F 1.4 2000 100 2.5 T = 125C T = 100C VA VJ VJ nsC 90 I = 520A V = 600V s F R 1.2 K 1600 80 2.0 f V t FR V rr max. t FR fr 1.0 70 I =600A F t I =600A fr I F RM 1200 60 1.5 0.8 I =450A F I =225A 50 F 0.6 800 40 1.0 Q r 30 0.4 typ. 400 20 0.5 0.2 10 0.0 0 0 0.0 0 40 80 120 160 0 200 400 600 800 1000 0 400 800 1200 A/ms C A/ms -di /dt -di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di / dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di / dt VJ F 0.14 Constants for Z calculation: thJS K/W 0.12 iR (K/W) t (s) thi i 1 0.001 0.08 0.10 ZZ 2 0.004 0.024 thJH thJS 3 0.027 0.112 0.08 4 0.082 0.464 0.06 0.04 0.02 0.00 0.001 0.01 0.1 1 10 s t Fig. 7 Transient thermal impedance junction to case 2000 IXYS All rights reserved 2 - 2