MEO 500-06 DA V = 600 V Fast Recovery RRM I = 514 A Epitaxial Diode FAVM t = 250 ns rr (FRED) Module Preliminary data 3 3 1 1 V V Type RSM RRM V V 600 600 MEO 500-06DA Symbol Test Conditions Maximum Ratings Features I T = 75 CA726 FRMS C 75 514 International standard package I T = C rectangular, d = 0.5 A FAVM C I t < 10 s rep. rating, pulse width limited by T 2680 A with DCB ceramic base plate FRM P VJM Planar passivated chips I T = 45 C t = 10 ms (50 Hz), sine 4800 A FSM VJ Short recovery time t = 8.3 ms (60 Hz), sine 5280 A Low switching losses T = 150 C t = 10 ms (50 Hz), sine 4320 A VJ Soft recovery behaviour 4750 t = 8.3 ms (60 Hz), sine A Isolation voltage 3600 V~ 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 115200 A s VJ UL registered E 72873 2 117100 t = 8.3 ms (60 Hz), sine A s 2 T = 150 C t = 10 ms (50 Hz), sine 93300 A s Applications VJ 2 t = 8.3 ms (60 Hz), sine 94800 A s Antiparallel diode for high frequency -40...+150 switching devices T C VJ T -40...+125 C Free wheeling diode in converters stg 110 T C and motor control circuits Smax Inductive heating and melting P T = 25 CW1750 tot C Uninterruptible power supplies (UPS) V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Ultrasonic cleaners and welders I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in. Advantages d Terminal connection torque (M6) 4.50-5.50/40-48 Nm/lb.in. High reliability circuit operation d Creeping distance on surface mm 12.7 Low voltage peaks for reduced S d Strike distance through air 9.6 mm protection circuits A 2 a Maximum allowable acceleration 50 m/s Low noise switching Weight 150 g Low losses Symbol Test Conditions Characteristic Values (per diode) typ. max. Dimensions in mm (1 mm = 0.0394 ) I T = 25 CV = V 24 mA R VJ R RRM T = 25 CV = 0.8 V mA 6 VJ R RRM T = 125 CV = 0.8 V 160 mA VJ R RRM V I = A 300 T = 125 CV1.17 F F VJ T =25 CV1.36 VJ 520 1.41 I = A T = 125 CV F VJ T =25 CV1.52 VJ V For power-loss calculations only 0.85 V T0 r 1.09 m T R DC current 0.114 K/W thJH R DC current 0.071 K/W thJC t I = A600 T = 100 Cn250 300s rr F VJ I V = V300 T = 25 CA88 RM R VJ -di/dt = A/800 sT = 100 CA132 VJ I rating includes reverse blocking losses at T , V = 0.6 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2000 IXYS All rights reserved 1 - 2 749 MEO 500-06 DA 800 20 200 T = 100C T = 100C VJ VJ V = 300V V = 300V R R A C A I RM Q 600 15 150 r I F I =1200A I =1200A F F T =125C VJ I = 600A I = 600A 400 10 100 F F T =25C VJ I = 300A I = 300A F F 200 5 50 0 0 0 A/ms 0.0 0.4 0.8 1.2 1.6 V 2.0 100 A/ms 1000 0 200 400 600 800 1000 V -di /dt -di /dt F F F Fig. 1 Forward current I versus Fig. 2 Typ. reverse recovery Fig. 3 Typ. peak reverse current I F RM max. voltage drop V per leg charge Q versus -di /dt versus -di /dt F r F F 1.4 450 60 3.0 T = 100C T = 100C VJ VJ V s ns V = 300V I = 600A R t F fr 50 2.5 1.2 400 V FR t fr K t f rr 40 2.0 1.0 350 V I =1200A FR F I = 600A 30 1.5 F I = 300A F 0.8 300 I RM 20 1.0 Q r 0.6 250 10 0.5 0.4 200 0 0.0 A/ms 0 40 80 120 C 160 0 200 400 600 800 1000 0 200 400 600 A/800ms 1000 -di /dt di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Typ. recovery time t Fig. 6 Typ. peak forward voltage V r RM rr FR versus junction temperature T versus -di /dt and t versus di /dt VJ F fr F 0.12 Constants for Z calculation: thJS K/W 0.10 iR (K/W) t (s) thi i 1 0.001 0.08 0.08 2 0.004 0.024 ZZ thJH 3 0.027 0.112 thJS 4 0.082 0.464 0.06 0.04 0.02 0.00 0.001 0.01 0.1 1 s 10 t Fig. 7 Transient thermal impedance junction to heatsink 2000 IXYS All rights reserved 2 - 2 814