MII75-12A3 IXYS

MII75-12A3 V= 2x 1200V CES IGBT (NPT) Module I= 90A C25 VV= 2.2 CE(sat) Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 NPT IGBT technology AC motor drives Isolation Voltage: V~ 3600 low saturation voltage Solar inverter Industry standard outline low switching losses Medical equipment RoHS compliant switching frequency up to 30 kHz Uninterruptible power supply Soldering pins for PCB mounting square RBSOA, no latch up Air-conditioning systems Base plate: DCB ceramic high short circuit capability Welding equipment Reduced weight positive temperature coefficient for Switched-mode and resonant-mode Advanced power cycling easy parallelling power supplies MOS input, voltage controlled Inductive heating, cookers ultra fast free wheeling diodes Pumps, Fans IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a 2013 IXYS all rights reservedMII75-12A3 Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V VJ CES max. DC gate voltage V 20 V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 90 A C25 C I T = 80 C 60 A C C80 total power dissipation P T = 25C 370 W tot C collector emitter saturation voltage V I = A V = 15 V50 T = 25C 2.2 2.7 V CE(sat) CGE VJ T = 125 C 2.7 V VJ gate emitter threshold voltage V I = 2mA V = V T = 25C 4.5 5.5 6.5 V VJ GE(th) CGECE collector emitter leakage current I V = V V = 0 V T = 25C 4 mA CES CE CES GE VJ T = 125 C 6 mA VJ gate emitter leakage current I V = 20 V 200 nA GES GE total gate charge Q V = 60 0 V V = 15 V I = 50 A 240 nC G(on) CE GE C turn-on delay time t 100 ns d(on) current rise time t 70 ns r inductive load T = 125 C VJ turn-off delay time t 500 ns d(off) V = 600 V I = 50 A CE C current fall time t 70 ns f V = 15 V R = 22 GE G turn-on energy per pulse E 7.6 mJ on turn-off energy per pulse E 5.6 mJ off reverse bias safe operating area RBSOA V = 15 V R = 22 T = 125 C GE G VJ A I V = 1200 V 100 CM CEmax short circuit safe operating area SCSOA V = 12 00 V CEmax short circuit duration t SC V = 12 0 0 V V = 15 V T = 125 C 10 s CE GE VJ short circuit current I R = 22 non-repetitive 180 A SC G thermal resistance junction to case R 0.33 K/W thJC thermal resistance case to heatsink K/W R 0.33 thCH Diode max. repetitive reverse voltage V T = 25C 1200 V VJ RRM forward current A I T = 25C 100 F25 C I T = 80 C 60 A F 80 C forward voltage V I = 50 A T = 25C 2.50 V F F VJ T = 125C 1.80 V VJ reverse current V = V mA I T = 25C 0.65 R R RRM VJ T = 125C 1 mA VJ reverse recovery charge Q 3.5 C rr V = 600 V R max. reverse recovery current I 40 A RM -di /dt = 40 0 A/s T = 125C F VJ reverse recovery time t 200 ns rr I = 50 A V = 0 V FGE reverse recovery energy E 1 mJ rec thermal resistance junction to case R 0.66 K/W thJC thermal resistance case to heatsink R 0.66 K/W thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a 2013 IXYS all rights reserved