Advance Technical Information TM TrenchT4 V = 40V MMIX1T660N04T4 DSS I = 660A Power MOSFET D25 R 0.85m DS(on) D G N-Channel Enhancement Mode D Avalanche Rated S S Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 40 V Isolated Tab DSS J V T = 25 C to 175 C, R = 1M 40 V DGR J GS D V Transient 15 V GSM I T = 25 C (Chip Capability) 660 A D25 C I T = 25 C, Pulse Width Limited by T 2600 A DM C JM S I T = 25 C 330 A A C E T = 25 C5J G AS C P T = 25 C 830 W G = Gate D = Drain D C S = Source T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C Silicon Chip on Direct-Copper Bond SOLD (DCB) Substrate V 50/60 Hz, 1 Minute 2500 V~ ISOL Isolated Substrate F Mounting Force 50..200 / 11..45 N/lb. - Excellent Thermal Transfer C - Increased Temperature and Power Weight 8 g Cycling Capability - High Isolation Voltage (2500V~) 175C Operating Temperature High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount Space Savings BV V = 0V, I = 250A 40 V DSS GS D High Power Density V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D Applications I V = 15V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 10 A DC-DC Converters and Offi-Line UPS DSS DS DSS GS T = 150C 1.5 mA Primary-Side Switch J High Speed Power Switching R V = 10V, I = 100A, Note 1 0.85 m DS(on) GS D Applications 2016 IXYS CORPORATION, All Rights Reserved DS100738(7/16)MMIX1T660N04T4 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 110 180 S fs DS D C 44.0 nF iss C V = 0V, V = 25V, f = 1MHz 6.5 nF oss GS DS C 3.5 nF rss R Gate Input Resistance 2.5 GI t 40 ns d(on) Resistive Switching Times t 430 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D DSS t 386 ns d(off) R = 1 (External) G t 260 ns f Q 860 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 240 nC gs GS DS DSS D DSS Q 290 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 660 A S GS I Repetitive, Pulse Width Limited by T 2640 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 60 ns rr I = 150A, V = 0V F GS I 2.1 A RM -di/dt = 100A/ s Q 63 nC RM V = 30V R Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537