X-On Electronics has gained recognition as a prominent supplier of MMO175-12io7 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MMO175-12io7 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MMO175-12io7 IXYS

MMO175-12io7 electronic component of IXYS
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Part No.MMO175-12io7
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 175 Amps 1200V
Datasheet: MMO175-12io7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 26.0664 ea
Line Total: USD 26.07 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 26.0664
10 : USD 24.047
25 : USD 22.9493
100 : USD 20.5259
500 : USD 18.465
1000 : USD 17.8333

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 26.8807
2 : USD 25.4288
3 : USD 25.4151

   
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We are delighted to provide the MMO175-12io7 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMO175-12io7 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MMO 175 I = 175 A AC Controller Modules RMS I = 80 A TAVM V = 1200/1600 V RRM A N V V RSM RRM I H V V Typ DSM DRM I / H G / F V V 1300 1200 MMO 175-12io7 N 1700 1600 MMO 175-16io7 G F Preliminary Data A Features Symbol Conditions Maximum Ratings Thyristor controller for AC I T = 85C 50-400 Hz (per single controller) 175 A RMS C (circuit W1C acc. to IEC) for mains I 125 A TRMS frequency I T = 85C 180 sine 80 A TAVM C Isolation voltage 3000 V~ I T = 45C t = 10 ms (50 Hz) 1500 A TSM VJ Planar glass passivated chips V = 0 t = 8.3 ms (60 Hz) 1600 A R Low forward voltage drop T = 125C t = 10 ms (50 Hz) 1350 A Leads suitable for PC board soldering VJ V = 0 t = 8.3 ms (60 Hz) 1450 A R 2 2 Applications I t T = 45C t = 10 ms (50 Hz) 11 200 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 10 750 A s R Switching and control of single and 2 three phase AC circuits T = 125C t = 10 ms (50 Hz) 9 100 A s VJ 2 Light and temperature control V = 0 t = 8.3 ms (60 Hz) 8 830 A s R Softstart AC motor controller (di/dt) T = 125C repetitive, I = 80 A 150 A/s cr VJ T Solid state switches f = 50 Hz t = 200 s p 2 V = / V D 3 DRM Advantages I = 0.45 A non repetitive, I = I 500 A/s G T TAVM Easy to mount with two screws di /dt = 0.45 A/s G Space and weight savings 2 (dv/dt) T = 125C V = / V 1000 V/s cr VJ D 3 DRM Improved temperature and power R = method 1 (linear voltage rise) GK cycling High power density P T = 125C t = 30 ms 10 W GM VJ p I = I t = 300 ms 5 W Small and light weight T T(AV)M p P 0.5 W GAVM V 10 V RGM T -40...+150 C VJ T 150 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL I < 1 mA t = 1 s 3000 V~ ISOL M Mounting torque (M4) 1.5 - 2.0 Nm d 14 - 18 lb.in. Data according to IEC 60747 and refer to a single Weight Typical including screws 18 g diode unless otherwise stated. Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. 20200120c 2020 IXYS All rights reserved 1 - 2MMO 175 Symbol Conditions Characteristic Values 10 typ. max. 1: I , T = 125C GT VJ I , I V / V = V / V T = 125C 5 mA 2: I , T = 25C D R R D RRM DRM VJ GT VJ 3: I , T = -40C V I = 200 A T = 25C 1.57 V GT VJ T T VJ V For power-loss calculations only 0.85 V T0 r 3.70 m t V V = 6 V T = 25C 1.5 V GT D VJ V T = -40C 1.6 V VJ G 3 I V = 6 V T = 25C 100 mA GT D VJ 2 6 1 5 T = -40C 200 mA VJ 1 V 2 V V = / V T = 125C 0.2 V 4 GD D 3 DRM VJ I 10 mA GD I t = 10 s T = 25C 450 mA L p VJ I = 0.45 A di /dt = 0.45 A/s G G 4: P = 0.5 W GAV I V = 6 V R = T = 25C 200 mA H D GK VJ 5: P = 5 W GM I , T = 125C GD VJ t V = V T = 25C 2 s gd D DRM VJ 6: P = 10 W GM I = 0.45 A di /dt = 0.45 A/s G G 0.1 0 1 2 3 4 10 10 10 10 mA 10 R 0.50 K/W thJC per thyristor DC current I mA R 0.12 K/W G thCH Fig. 1 Gate trigger characteristics R 0.25 K/W thJC per module R 0.06 K/W thCH d Creeping distance on surface 11.2 mm S d Creepage distance in air 5.0 mm A 1000 2 a Maximum allowable acceleration 50 m/s T = 25C VJ Dimensions in mm (1 mm = 0.0394 ) typ. Limit 100 1,5 t gd 2 s 10 3,0 18,8 1 10 100 1000 I mA G Fig. 2 Gate trigger delay time 2x M4 5 6 7 8 1 2 3 4 3,0 39 47 IXYS reserves the right to change limits, test conditions and dimensions. 20200120c 2020 IXYS All rights reserved 2 - 2 4,3 2 8 21,8 9 30,3 20,30

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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