X-On Electronics has gained recognition as a prominent supplier of MMO90-16IO6 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MMO90-16IO6 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MMO90-16IO6 IXYS

MMO90-16IO6 electronic component of IXYS
MMO90-16IO6 IXYS
MMO90-16IO6 Discrete Semiconductor Modules
MMO90-16IO6  Semiconductors

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See Product Specifications
Part No. MMO90-16IO6
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Module; opposing; 600V; 41A; SOT227B; Ufmax:1.43V; Ifsm:860A; screw
Datasheet: MMO90-16IO6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 38.346 ea
Line Total: USD 38.35 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 36.0858

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 22.6519
10 : USD 20.8871
25 : USD 19.9445
100 : USD 17.8387

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 38.346
2 : USD 36.246
10 : USD 35.644

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 16.3916
5 : USD 15.0018

   
Manufacturer
Product Category
Brand
Scr Module Type
Peak Repetitive Off-State Voltage Vdrm
Gate Trigger Current Max Igt
Current It Av
On State Rms Current Itrms
Peak Non Rep Surge Current Itsm 50Hz
Holding Current Max Ih
Gate Trigger Voltage Max Vgt
Operating Temperature Max
Svhc
Case Temperature Tc
Current Itsm
Igt Temperature
Itsm Frequency
No. Of Pins
Operating Temperature Min
Operating Temperature Range
Repetitive Reverse Voltage Vrrm Max
Temperature Vgt
Termination Type
Thyristor Case
Thyristor Case Style
Thyristor Type
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We are delighted to provide the MMO90-16IO6 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMO90-16IO6 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MMO90-16io6 V = 1600 V RRM Thyristor I = 50 A TAV V = 1.2 V T AC Controlling 1~ full-controlled Part number MMO90-16io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 3000 Planar passivated chip Softstart AC motor control Industry standard outline Long-term stability DC Motor control RoHS compliant Power converter Epoxy meets UL 94V-0 AC power control Base plate: Copper Lighting and temperature control internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c 2020 IXYS all rights reservedMMO90-16io6 Ratings Thyristor Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1600 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 6 0 0 V T = 25C 100 A R/D R/D VJ V = 1 6 0 0 V T = 1 2 5 C 10 mA R/D VJ forward voltage drop V I = 5 0 A T = 25C 1.27 V T T VJ I = 1 0 0 A 1.53 V T T = C 1.20 V I = 5 0 A 150 T VJ I = 1 0 0 A 1.50 V T average forward current T = 9 5 C T = 1 5 0 C 50 A I TAV C VJ RMS forward current per phase I 180 sine 110 A RMS V T = 1 5 0 C 0.88 V threshold voltage T0 VJ for power loss calculation only slope resistance r 6 m T 0.6 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.1 K/W thCH P total power dissipation T = 25C 210 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 800 A I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 865 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 680 VJ t = 8,3 ms (60 Hz), sine V = 0 V 735 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 3.20 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 3.12 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 2.31 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 2.25 kAs R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 32 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 5 0 C 10 W GM P C t = 300 s 5 W P 0.5 W P average gate power dissipation GAV critical rate of rise of current T = 150C f = 50 Hz repetitive, I = 150 A 100 (di/dt) A/s cr VJ T 0.3 t = 2 0 0 s di /dt = A/s P G I = 0.3A V = V non-repet., I = 50 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 150C 1000 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 1.5 V GT D VJ T = -40C 1.6 V VJ gate trigger current V = 6 V T = 25C 100 mA I VJ GT D T = -40C 200 mA VJ gate non-trigger voltage V V = V T = 150C 0.2 V GD D DRM VJ gate non-trigger current I 5 mA GD latching current t = 10 s T = 25C 250 mA I VJ L p I = 0.3A di /dt = 0.3 A/s G G holding current I V = 6 V R = T = 25C 100 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.3A di /dt = 0.3 A/s G G turn-off time V = 100 V I = 50A V = V T =125 C 150 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 15 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c 2020 IXYS all rights reserved

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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