MUBW10-12A7 IXYS

MUBW 10-12 A7 Converter - Brake - Inverter Module (CBI2) 21 22 T1 D1 T5 D7 T3 D5 D3 D11 D13 D15 16 20 18 7 15 19 17 1 23 4 6 5 T7 T2 T4 T6 D2 D4 D6 D14 D16 D12 11 14 12 13 10 23 24 8 B4 NTC 9 Three Phase Brake Chopper Three Phase Rectifier Inverter V = 1600V V = 1200 V V = 1200 V RRM CES CES I = 26 A I = 20 A I = 20 A DAVM C25 C25 I = 160 A V = 2.3 V V = 2.3 V FSM CE(sat) CE(sat) Application: AC motor drives with Input Rectifier Bridge D11 - D16 Input from single or three phase grid Symbol Conditions Maximum Ratings Three phase synchronous or asynchronous motor V 1600 V RRM electric braking operation I T = 80C sine 180 19 A FAV C Features I T = 80C rectangular d = 1/3 18 A DAVM C I T = 25C t = 10 ms sine 50 Hz 160 A FSM VJ High level of integration - only one power semiconductor module required for the P T = 25C 85 W tot C whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching Symbol Conditions Characteristic Values losses, high RBSOA and short circuit (T = 25C, unless otherwise specified) VJ ruggedness min. typ. max. Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery V I = 10 A T = 25C 1.3 1.6 V VJ F F Industry standard package with insulated T = 125C 1.3 V VJ copper base plate and soldering pins for PCB mounting I V = V T = 25C 0.1 mA VJ R R RRM Temperature sense included T = 125C 1 mA VJ t V = 100 V I = 10 A di/dt = -10 A/s 1 s F rr R R (per diode) 1.47 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2002 IXYS All rights reserved IXYS Semiconductor GmbH IXYS Corporation Edisonstr. 15, D-68623 Lampertheim 3540 Bassett Street, Santa Clara CA 95054 1 - 8 Phone: +49-6206-503-0, Fax: +49-6206-503627 Phone: (408) 982-0700, Fax: 408-496-0670 203MUBW 10-12 A7 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction V T = 25C to 150C 1200 V CES VJ V Continuous 20 V GES V Transient 30 V GEM D11 - D16 I T = 25C 20 A C25 C I T = 80C 15 A C80 C Rectifier Diode (typ. at T = 125C) J V = 1.11 V R = 19 m 0 0 RBSOA V = 15 V R = 82 T = 125C I = 20 A GE VJ CM G Clamped inductive load L = 100 H V V CEK CES T1 - T6 / D1 - D6 t V = 720 V V = 15 V R = 82 T = 125C 10 s IGBT (typ. at V = 15 V T = 125C) GE VJ GE J SC CE G (SCSOA) non-repetitive V = 1.32V R = 131 m 0 0 P T = 25C 105 W Free Wheeling Diode (typ. at T = 125C) tot C J B4 V = 1.32 V R = 30 m 0 0 T7 / D7 Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) IGBT (typ. at V = 15 V T = 125C) GE J VJ V = 1.32 V R = 131 m min. typ. max. 0 0 V I = 10 A V = 15 V T = 25C 2.3 2.7 V Free Wheeling Diode (typ. at T = 125C) J VJ CE(sat) C GE V = 1.39 V R = 56 m T = 125C 2.7 V 0 0 VJ V I = 0.4 mA V = V 4.5 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 0.6 mA VJ Thermal Response CES CE CES GE T = 125C 0.6 mA VJ I V = 0 V V = 20 V 200 nA GES CE GE t 50 ns d(on) t 40 ns r Inductive load, T = 125C VJ t 290 ns d(off) V = 600 V I = 10 A CE C t 60 ns f V = 15 V R = 82 GE G E 1.2 mJ on D11 - D16 E 1.1 mJ off Rectifier Diode (typ.) C V = 25 V V = 0 V f = 1 MHz 600 pF ies CE GE C = 0.093 J/K R = 1.212 K/W th1 th1 Q V = 600V V = 15 V I = 10 A 45 nC Gon CE GE C C = 0.778 J/K R = 0.258K/W th2 th2 R (per IGBT) 1.2 K/W thJC T1 - T6 / D1 - D6 IGBT (typ.) C = 0.09 J/K R = 0.954 K/W th1 th1 Output Inverter D1 - D6 C = 0.809J/K R = 0.246 K/W th2 th2 Symbol Conditions Maximum Ratings Free Wheeling Diode (typ.) C = 0.065 J/K R = 1.758 K/W th1 th1 I T = 25C 25 A F25 C C = 0.639 J/K R = 0.342 K/W th2 th2 I T = 80C 15 A F80 C T7 / D7 IGBT (typ.) Symbol Conditions Characteristic Values C = 0.09 J/K R = 0.954 K/W th1 th1 min. typ. max. C = 0.809 J/K R = 0.246 K/W th2 th2 V I = 10 A V = 0 V T = 25C 2.2 2.6 V VJ Free Wheeling Diode (typ.) F F GE T = 125C 1.6 V C = 0.043 J/K R = 2.738 K/W VJ th1 th1 C = 0.54 J/K R = 0.462 K/W th2 th2 I I = 15 A di /dt = -400 A/s T = 125C 16 A VJ RM F F t V = 600 V V = 0 V 130 ns rr R GE R (per diode) 2.1 K/W thJC 2002 IXYS All rights reserved 2 - 8