MUBW15-12T7 IXYS

MUBW 15-12 T7 Converter - Brake - Inverter Module (CBI2) with Trench IGBT technology Preliminary data 21 22 D11 D13 D15 D7 D1 D3 D5 NTC 18 20 T1 T3 T5 8 16 7 17 19 12 3 15 65 4 D2 D12 D14 D16 D4 D6 11 14 13 12 T7 T2 T4 T6 9 10 23 24 Three Phase Brake Chopper Three Phase Rectifier Inverter V = 1600 V V = 1200 V V = 1200 V RRM CES CES I = 38 A I = 30 A I = 30 A FAVM C25 C25 I = 300 A V = 1.7 V V = 1.7 V FSM CE(sat) CE(sat) Application: AC motor drives with Input Rectifier Bridge D11 - D16 Input from single or three phase grid Symbol Conditions Maximum Ratings Three phase synchronous or asynchronous motor V 1600 V RRM electric braking operation I T = 80C sine 180 25 A FAV C 1 Features I T = 80C rectangular d = / bridge 72 A DAVM C 3 I T = 25C t = 10 ms sine 50 Hz 300 A High level of integration - only one power FSM VJ semiconductor module required for the P T = 25C 100 W tot C whole drive Inverter with Trench IGBTs - low saturation voltage - positive temperature coefficient - fast switching Symbol Conditions Characteristic Values - short tail current (T = 25C, unless otherwise specified) VJ Epitaxial free wheeling diodes with min. typ. max. Hiperfast and soft reverse recovery Industry standard package with insulated V I = 15 A T = 25C 1 1.2 V VJ F F copper base plate and soldering pins for T = 125C 1 V VJ PCB mounting Temperature sense included I V = V T = 25C 0.02 mA VJ R R RRM T = 125C 0.4 mA VJ R (per diode) 1.3 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 1 - 4 0619MUBW 15-12 T7 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction V T = 25C to 150C 1200 V CES VJ V Continuous 20 V GES I T = 25C 30 A C25 C I T = 80C 15 A C80 C I T = 80C t = 1 ms 30 A CM C p IGBT (typ. at V = 15 V T = 125C) P T = 25C 140 W GE J tot C T1-T6 V = 0.92 V R = 72 m 0 0 Symbol Conditions Characteristic Values T7 (T = 25C, unless otherwise specified) VJ V = 0.92 V R = 72 m 0 0 min. typ. max. V I = 15 A V = 15 V T = 25C 1.7 2.15 V VJ CE(sat) C GE Diode (typ. at T = 125C) J T = 125C 2.0 V VJ D1-D6 V = tbd V R = tbd m V I = 0.5 mA V = V 5 5.8 6.5 V 0 0 GE(th) C GE CE D7 I V = V V = 0 V T = 25C 2.7 mA VJ CES CE CES GE V = tbd V R = tbd m 0 0 T = 125C 0.7 mA VJ D11-D16 I V = 0 V V = 20 V 400 nA V = tbd V R = tbd m 0 0 GES CE GE C V = 25 V V = 0 V f = 1 MHz 1.1 nF ies CE GE Thermal Response Q V = 600 V V = 15 V I = 15 A 150 nC Gon CE GE C t 90 ns d(on) t 50 ns r Inductive load, T = 125C VJ t 520 ns d(off) V = 600 V I = 15 A CE C t 90 ns f V = 15 V R = 75 GE G E 2.1 mJ on E 1.5 mJ off RBSOA I = I V = 15 V IGBT (typ.) GE C CM R = 75 T = 125C V < V - L di/dt V VJ CEK CES S G T1-T6 C = tbd J/K R = tbd K/W th1 th1 I V = 720 V V = 15 V R = 75 60 A GE SC CE G C = tbd J/K R = tbd K/W th2 th2 (SCSOA) t < 10 s non-repetitive T = 125C p VJ T7 R (per IGBT) 0.88 K/W C = tbd J/K R = tbd K/W thJC th1 th1 C = tbd J/K R = tbd K/W th2 th2 Output Inverter D1 - D6 Diode (typ.) D1-D6 Symbol Conditions Maximum Ratings C = tbd J/K R = tbd K/W th1 th1 C = tbd J/K R = tbd K/W th2 th2 I T = 25C 25 A F25 C I T = 80C 17 A D7 F80 C C = tbd J/K R = tbd K/W th1 th1 C = tbd J/K R = tbd K/W th2 th2 Symbol Conditions Characteristic Values D11-D16 min. typ. max. C = tbd J/K R = tbd K/W th1 th1 V I = 15 A V = 0 V T = 25C 2.0 2.5 V C = tbd J/K R = tbd K/W VJ th2 th2 F F GE T = 125C 1.5 V VJ I tbd A RM Q I = tbd A di /dt = -tbd A/s T = 125C tbd C VJ rr F F t V = 600 V V = 0 V tbd ns rr R GE E tbd mJ rec R (per diode) 2.1 K/W thJC 2006 IXYS All rights reserved 2 - 4 0619