MUBW20-06A6K IXYS

MUBW20-06A6K Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module (CBI 1) V = 1600 V V = 600 V V = 600 V RRM CES CES I = 95 A I = 12 A I = 25 A DAVM25 C25 C25 NPT IGBT I = 250 A V = 2.25 V V = 2.0 V FSM CE(sat) CE(sat) Preliminary data Part name (Mar king on product) MUBW20-06A6K E72873 Pin configuration see outlines. Features: Application: Package: High level of integration - only one AC motor drives with UL registered power semiconductor module required Industr y standard E1-pack Input from single or three phase gr id for the whole dr ive Three phase synchronous or Inver ter with NPT IGBTs asynchronous motor - low saturation voltage Electr ic braking operation - positive temperature coefficient - fast switching - short tail current Epitaxial free wheeling diodes with hiperfast and soft reverse recover y Industr y standard package with insu lated copper base plate and solder ing pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. 20090929b 2009 IXYS All rights reserved 1 - 5 PHASE-OUTMUBW20-06A6K Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C to 150C 600 V CES VJ max. DC gate voltage V continuous 20 V GES max. transient collector gate voltage V transient 30 V GEM collector current I T = 25C 25 A C25 C I T = 80C 17 A C80 C total power dissipation P T = 25C 85 W tot C V collector emitter saturation voltage I = 15 A V = 15 V T = 25C 2.0 2.4 V CE(sat) C GE VJ T = 125C 2.3 V VJ V gate emitter threshold voltage I = 0.4 mA V = V T = 25C 4.5 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.6 mA CES CE CES GE VJ T = 125C 1.3 mA VJ gate emitter leakage current I V = 0 V V = 20 V 100 nA GES CE GE input capacitance C V = 25 V V = 0 V f = 1 MHz 800 pF ies CE GE total gate charge Q V = 300 V V = 15 V I = 15 A 57 nC G(on) CE GE C turn-on delay time t 30 ns d(on) current rise time t inductive load T = 125C 25 ns r VJ turn-off delay time t V = 300 V I = 15 A 160 ns d(off) CE C t current fall time V = 15 V R = 39 W 50 ns f GE G(on) turn-on energy per pulse E R = 22 W 0.42 mJ on G(off) turn-off energy per pulse E 0.44 mJ off reverse bias safe operating area I RBSOA V = 15 V R = 68 W 30 A CM GE G L = 100 H clamped induct. load T = 125C VJ V = V - L di/dt CEmax CES S t short circuit safe operating area V = 600 V V = 15 V T = 125C 10 s SC CE GE VJ (SCSOA) R = 68 W non-repetitive G R thermal resistance junction to case (per IGBT) 1.5 K/W thJC thermal resistance case to heatsink R (per IGBT) 0.55 K/W thCH Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 150C 600 V RRM VJ forward current I T = 25C 36 A F25 C I T = 80C 24 A F80 C forward voltage V I = 15 A V = 0 V T = 25C 2.1 V F F GE VJ T = 125C 1.5 V VJ I max. reverse recovery current V = 300 V 14 A RM R t reverse recovery time di /dt = -400 A/s T = 100C 80 ns rr F VJ reverse recovery energy E I = 15 A V = 0 V tbd J rec(off) F GE thermal resistance junction to case R (per diode) 1.6 K/W thJC thermal resistance case to heatsink R (per diode) 0.55 K/W thCH T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20090929b 2009 IXYS All rights reserved 2 - 5 PHASE-OUT