MUBW25-06A6K IXYS

MUBW25-06A6K Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module (CBI ) V = 600 V V = 600 V V = 600 V RRM CES CES I = 95 A I = 2 A I = 3 A DAVM25 C25 C25 NPT IGBT I = 250 A V = 2.0 V V = 2. V FSM CE(sat) CE(sat) Preliminary data Part name (Marking on product) MUBW25-06A6K E72873 Pin configuration see outlines. Features: Application: Package: High level of integration - only one AC motor drives with UL registered power semiconductor module required Industry standard E-pac k Input from single or three phase grid for the whole drive Three phase synchronous or Inverter with NPT IGBTs asynchronous motor - low saturation voltage Electric braking operation - positive temperature coefficient - fast switching - short tail current Epitaxial free wheeling diodes with hiperfast and soft reverse recovery Industry standard package with insu lated copper base plate and soldering pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. 20073a 2007 IXYS All rights reserved - 5 PHASE-OUTMUBW25-06A6K Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C to 50C 600 V CES VJ max. DC gate voltage V continuous 20 V GES max. transient collector gate voltage V transient 30 V GEM collector current I T = 25C 3 A C25 C I T = 80C 2 A C80 C total power dissipation P T = 25C 00 W tot C V collector emitter saturation voltage I = 20 A V = 5 V T = 25C 2. 2.4 V CE(sat) C GE VJ T = 25C 2.3 V VJ V gate emitter threshold voltage I = 0.5 mA V = V T = 25C 4.5 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.6 mA CES CE CES GE VJ T = 25C .3 mA VJ gate emitter leakage current I V = 0 V V = 20 V 00 nA GES CE GE input capacitance C V = 25 V V = 0 V f = MHz 00 pF ies CE GE total gate charge Q V = 300 V V = 5 V I = 20 A 65 nC G(on) CE GE C turn-on delay time t 50 ns d(on) current rise time t 60 ns r inductive load T = 25C VJ turn-off delay time t 300 ns d(off) V = 300 V I = 20 A CE C t current fall time 30 ns f V = 5 V R = 47 W GE G turn-on energy per pulse E 0.95 mJ on turn-off energy per pulse E 0.7 mJ off reverse bias safe operating area I RBSOA V = 5 V R = 47 W 40 A CM GE G L = 00 H clamped induct. load T = 25C VJ V = V - L di/dt CEmax CES S t short circuit safe operating area V = 600 V V = 5 V T = 25C 0 s SC CE GE VJ (SCSOA) R = 47 W non-repetitive G R thermal resistance junction to case (per IGBT) .25 K/W thJC thermal resistance case to heatsink R (per IGBT) 0.45 K/W thCH Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 50C 600 V RRM VJ forward current I T = 25C 36 A F25 C I T = 80C 24 A F80 C forward voltage V I = 20 A V = 0 V T = 25C 2.2 V F F GE VJ T = 25C .6 V VJ I max. reverse recovery current V = 300 V 4 A RM R reverse recovery time t di /dt = -400 A/s T = 00C 90 ns rr F VJ reverse recovery energy E I = 20 A V = 0 V tbd J rec(off) F GE thermal resistance junction to case R (per diode) .6 K/W thJC thermal resistance case to heatsink R (per diode) 0.55 K/W thCH T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 2007 3a 2007 IXYS All rights reserved 2 - 5 PHASE-OUT