MUBW50-12A8 IXYS

MUBW 50-12 A8 Converter - Brake - Inverter Module (CBI3) 21 22 T1 D1 T5 D7 T3 D5 D3 D11 D13 D15 16 20 18 7 15 19 17 1 23 4 6 5 T7 T2 T4 T6 D2 E72873 D4 D6 D14 D16 D12 See outline drawing for pin arrangement 11 14 12 13 10 23 24 8 NTC Preliminary data 9 Three Phase Brake Chopper Three Phase Rectifier Inverter V = 1600 V V = 1200 V V = 1200 V RRM CES CES I = 70 A I = 50 A I = 85 A FAVM C25 C25 I = 700 A V = 2.5 V V = 2.2 V FSM CE(sat) CE(sat) Application: AC motor drives with Input Rectifier D11 - D16 Input from single or three phase grid Symbol Conditions Maximum Ratings Three phase synchronous or asynchronous motor V 1600 V RRM electric braking operation I T = 80C sine 180 50 A FAV C Features I T = 80C rectangular d = 1/3 bridge 140 A DAVM C I T = 25C t = 10 ms sine 50 Hz 700 A FSM VJ High level of integration - only one power semiconductor module required for the P T = 25C 135 W tot C whole drive NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit Symbol Conditions Characteristic Values ruggedness (T = 25C, unless otherwise specified) VJ Epitaxial free wheeling diodes with min. typ. max. Hiperfast and soft reverse recovery Industry standard package with insulated V I = 50 A T = 25C 1.1 1.3 V VJ F F copper base plate and soldering pins for T = 125C 1.1 V VJ PCB mounting I V = V T = 25C 0.05 mA VJ R R RRM Temperature sense included T = 125C 0.8 mA VJ R (per diode) 0.94 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20070912a 2007 IXYS All rights reserved 1 -4MUBW 50-12 A8 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction V T = 25C to 150C 1200 V CES VJ V Continuous 20 V GES I T = 25C 85 A C25 C I T = 80C 60 A C80 C IGBT (typ. at V = 15 V T = 125C) GE J RBSOA V = 15 V R = 22 T = 125C I = 100 A GE VJ CM G T1-T6 Clamped inductive load L = 100 H V V CEK CES V = 1.5 V R = 20 m 0 0 T7 t V = V V = 15 V R = 22 T = 125C 10 s GE VJ SC CE CES G V = 1.5 V R = 40 m 0 0 (SCSOA) non-repetitive P T = 25C 350 W tot C Diode (typ. at T = 125C) J D1-D6 V = 1.25 V R = 5.5 m 0 0 Symbol Conditions Characteristic Values D7 (T = 25C, unless otherwise specified) V = 1.3 V R = 30 m 0 0 VJ min. typ. max. D11-D16 V = 0.85 V R = 5 m 0 0 V I = 50 A V = 15 V T = 25C 2.2 2.6 V VJ CE(sat) C GE T = 125C 2.5 V VJ Thermal Response V I = 2 mA V = V 4.5 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 3.7 mA VJ CES CE CES GE T = 125C 3.1 mA VJ I V = 0 V V = 20 V 200 nA GES CE GE t 100 ns d(on) t 70 ns r Inductive load, T = 125C VJ t 500 ns d(off) IGBT (typ.) V = 600 V I = 50 A CE C t 70 ns T1-T6 f V = 15 V R = 22 GE G E 7.6 mJ C = 0.216 J/K R = 0.264 K/W th1 th1 on C = 1.338 J/K R = 0.086 K/W E 5.6 mJ th2 th2 off T7 C V = 25 V V = 0 V f = 1 MHz 3.3 nF C = 0.134 J/K R = 0.424 K/W th1 th1 ies CE GE C = 0.986 J/K R = 0.126 K/W Q V = 600 V V = 15 V I = 50 A 230 nC th2 th2 Gon CE GE C R (per IGBT) 0.35 K/W Diode (typ.) thJC D1-D6 C = 0.138 J/K R = 0.48 K/W th1 th1 C = 0.957 J/K R = 0.13 K/W th2 th2 Output Inverter D1 - D6 D7 C = 0.038 J/K R = 1.725 K/W th1 th1 Symbol Conditions Maximum Ratings C = 0.439 J/K R = 0.375 K/W th2 th2 D11-D16 I T = 25C 110 A F25 C C = 0.086 J/K R = 0.738 K/W th1 th1 I T = 80C 70 A F80 C C = 0.621 J/K R = 0.202 K/W th2 th2 Symbol Conditions Characteristic Values min. typ. max. V I = 50 A V = 0 V T = 25C 2.1 2.5 V VJ F F GE T = 125C 1.5 V VJ I I = 60 A di /dt = -500 A/s T = 125C 41 A VJ RM F F t V = 600 V V = 0 V 200 ns rr R GE R (per diode) 0.61 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20070912a 2007 IXYS All rights reserved 2 -4