MUBW50-12T8 IXYS

MUBW 50-12 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 2 22 T1 T3 T5 D1 D3 D11 D13 D15 D7 D5 20 6 8 NTC 8 7 5 7 9 5 6 4 2 3 T7 T2 T4 T6 D2 D4 D12 D14 D16 9 D6 4 2 3 0 24 23 Three Phase Brake Three Phase Rectifier Chopper Inverter V = 600 V V = 200 V V = 200 V RRM CES CES I = 50 A I = 55 A I = 80 A FAVM C25 C25 I = 850 A V = .7 V V = .7 V FSM CE(sat) CE(sat) Application: AC motor drives with Input Rectifier Bridge D11 - D16 Input from single or three phase grid Symbol Conditions Maximum Ratings Three phase synchronous or V 600 V RRM asynchronous motor electric braking operation I T = 80C sine 80 50 A FAV C I T = 80C rectangular d = / bridge 40 A DAVM C 3 Features I T = 25C t = 0 ms sine 50 Hz 850 A FSM C P 25 High level of integration - only one T = 25C W tot C power semiconductor module required for the whole drive IGBT technology with low saturation Symbol Conditions Characteristic Values voltage, low switching losses and tail (T = 25 C, unless otherwise specified) current, high RBSOA and short circuit VJ ruggedness min. typ. max. Epitaxial free wheeling diodes with V I = 50 A T = 25C .5 .3 V Hiperfast and soft reverse recovery F F VJ T = 25C .05 V Industry standard package with VJ insulated copper base plate and I V = V T = 25C 0.05 mA R R RRM VJ soldering pins for PCB mounting T = 25C 0.8 mA VJ Temperature sense included R (per diode) .0 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved - 7 0646MUBW 50-12 T8 Output Inverter T1 - T6 Symbol Conditions Maximum Ratings V T = 25C to 50C 200 V CES VJ V Continuous 20 V GES I T = 25C 80 A C25 C I T = 80C 50 A C80 C I T = 80C t = ms 00 A CM C p P T = 25C 270 W tot C Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. V I = 50 A V = 5 V T = 25C .7 2. 5 V CE(sat) C GE VJ T = 25C 2.0 V VJ V I = 2 mA V = V 5 5.8 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 2.7 mA CES CE CES GE VJ T = 25C mA VJ 0.7 I V = 0 V V = 20 V 400 nA GES CE GE C V = 25 V V = 0 V f = MHz 3.5 nF ies CE GE Q V = 600 V V = 5 V I = 50 A 470 nC Gon CE GE C t 90 ns d(on) t 50 ns r Inductive load, T = 25C VJ t 520 ns d(off) V = 600 V I = 50 A CE C t 90 ns f V = 5 V R = 8 GE G E 5 mJ on E 6.5 mJ off RBSOA I = I V = 5 V V < V - L di/dt V C CM GE CEK CES S R = 8 T = 25C G VJ t V = 720 V V = 5 V R = 8 200 A SC CE GE G (SCSOA) t < 0 s non-repetitive T = 25C P VJ R 0.46 K/W thJC Output Inverter D1 - D6 Symbol Conditions Maximum Ratings I T = 25C 00 A F25 C I T = 80C 50 A F80 C Symbol Conditions Characteristic Values min. typ. max. V 2. 2.6 V I = 50 A T = 25C F F VJ T = 25C .6 V VJ I 90 A RM Q I = 60 A di /dt = -200 A/s 0 C rr F F t T = 25C V = 600 V V = 0 V 60 ns rr VJ R GE E 4 mJ rec R (per diode) 0.65 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 2 - 7 0646