MUBW50-17T8 IXYS

MUBW 50-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 T1 T3 T5 D1 D3 D11 D13 D15 D7 D5 20 16 18 NTC 8 7 15 17 19 5 6 4 2 3 1 T7 T2 T4 T6 D2 D4 D12 D14 D16 9 D6 14 11 12 13 E72873 10 24 23 Three Phase Brake Three Phase Rectifier Chopper Inverter V = 2200 V V = 1700 V V = 1700 V RRM CES CES I = 60 A I = 48 A I = 74 A FAVM C25 C25 I = 550 A V = 2.1 V V = 2.0 V FSM CE(sat) CE(sat) Application: AC motor drives with Input Rectifier Bridge D11 - D16 Input from single or three phase gr id Symbol Conditions Maximum Ratings Three phase synchronous or V 2200 V RRM asynchronous motor Electr ic braking operation I T = 80C sine 180 40 A FAV C 1 I T = 80C rectangular d = / br idge 130 A DAVM C 3 Features I T = 25C t = 10 ms sine 50 Hz 550 A FSM C P 110 High level of integration - only one T = 25C W tot C power semiconductor module required for the whole dr ive IGBT technology with low saturation Symbol Conditions Characteristic Values voltage, low switching losses and tail (T = 25C, unless otherwise specified) current, high RBSOA and shor t circuit VJ r uggedness min. typ. max. Epitaxial free wheeling diodes with V I = 50 A T = 25C 1.25 1.5 V Hiperfast and soft reverse recover y F F VJ T = 125C 1.25 V Industr y standard package with VJ insulated copper base plate and I V = V T = 25C 0.05 mA R R RRM VJ solder ing pins for PCB mounting T = 125C 0.8 mA VJ Temperature sense included R (per diode) 1.1 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20090826a 2009 IXYS All rights reserved 1 - 8MUBW 50-17 T8 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction V T = 25C to 150C 1700 V CES VJ V Continuous 20 V GES I T = 25C 74 A C25 C I I T = 80C 53 A C80 C R 0 I T = 80C t = 1 ms 100 A CM C p V 0 P T = 25C 290 W tot C Symbol Conditions Characteristic Values IGBT (typ. at V = 15 V T = 125C) GE J (T = 25C, unless otherwise specified) VJ T1-T6 V = 1.0 V R = 25 mW min. typ. max. 0 0 T7 V I = 50 A V = 15 V T = 25C 2.0 2.4 V CE(sat) C GE VJ V = 1.0 V R = 28 mW T = 125C 2.4 V 0 0 VJ V I = 2 mA V = V 5 6.5 V GE(th) C GE CE Diode (typ. at T = 125C) J I V = V V = 0 V T = 25C 0.4 mA CES CE CES GE VJ D1-D6 T = 125C mA VJ 1.0 V = 1.35 V R = 15 mW 0 0 I V = 0 V V = 20 V 400 nA GES CE GE D7 V = 1.65 V R = 37 mW C V = 25 V V = 0 V f = 1 MHz 4.4 nF 0 0 ies CE GE D11-D16 Q V = 900 V V = 15 V I = 75 A 600 nC Gon CE GE C V = 0.83 V R = 4.1 mW 0 0 t 250 ns d(on) t 50 ns r Inductive load, T = 125C VJ t 500 ns d(off) V = 900 V I = 50 A CE C t 480 ns f V = 15 V R = 8 GE G E 11 mJ on E 12 mJ off RBSOA I = I V = 15 V V < V - L di/dt V C CM GE CEK CES S R = 27 T = 125C G VJ t V = 1000 V V = 15 V R = 27 10 s SC CE GE G (SCSOA) t < 10 s non-repetitive T = 125C P VJ R 0.43 K/W thJC Output Inverter D1 - D6 Symbol Conditions Maximum Ratings I T = 25C 56 A F25 C I T = 80C 39 A F80 C Symbol Conditions Characteristic Values min. typ. max. V I = 50 A T = 25C 2.0 2.4 V F F VJ T = 125C 2.0 V VJ I 80 A RM Q I = 50 A di /dt = -1200 A/s 20 C rr F F t T = 125C V = 900 V V = 0 V 650 ns rr VJ R GE E 9 mJ rec R (per diode) 0.65 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20090826a 2009 IXYS All rights reserved 2 - 8