MWI150-12T8T V = 1200 V CES Six-Pack I = 215 A C25 Trench IGBT V = 1.7 V CE(sat) Part name (Mar king on product) MWI150-12T8T 16, 17, 18 30, 31, 32 5 9 1 19 6 10 2 27 24 21 28 25 22 NTC 29 26 23 E 72873 20 Pin configuration see outlines. 3 7 11 4 8 12 33, 34, 35 13, 14, 15 Features: Application: Package: Trench IGBT technology AC motor dr ives E3-Pac standard outline low saturation voltage Solar inver ter Insulated copper base plate low switching losses Medical equipment Solder ing pins for PCB mounting square RBSOA, no latch up Uninterr uptible power supply Temperature sense included high shor t circuit capability Air-conditioning systems positive temperature coefficient Welding equipment for easy parallelling Switched-mode and MOS input, voltage controlled resonant-mode power supplies ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate IXYS reserves the right to change limits, test conditions and dimensions. 20081209b 2008 IXYS All rights reserved 1 - 7MWI150-12T8T Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 215 A C25 C I T = 80C 150 A C80 C total power dissipation P T = 25C 690 W tot C collector emitter saturation voltage V I = 150 A V = 15 V T = 25C 1.7 2.1 V CE(sat) C GE VJ T = 125C 2.0 V VJ gate emitter threshold voltage V I = 6 mA V = V T = 25C 5.0 5.8 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 6 mA CES CE CES GE VJ T = 125C 2 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE input capacitance C V = 25 V V = 0 V f = 1 MHz 10770 pF ies CE GE Q total gate charge V = 600 V V = 15 V I = 150 A 860 nC G(on) CE GE C t turn-on delay time 270 ns d(on) t current rise time inductive load T = 125C 50 ns r VJ turn-off delay time t V = 600 V I = 150 A 500 ns d(off) CE C current fall time t V = 15 V R = 2.4 W 340 ns f GE G turn-on energy per pulse E L = 70 nH 15.5 mJ on S E turn-off energy per pulse 20 mJ off RBSOA reverse bias safe operating area V = 15 V R = 2.4 W T = 125C GE G VJ V = 1200 V 300 A CEK short circuit safe operating area SCSOA short circuit duration t V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ short circuit current I R = 2.4 W non-repetitive 600 A SC G thermal resistance junction to case R (per IGBT) 0.18 K/W thJC Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 196 A F25 C I T = 80C 132 A F80 C forward voltage V I = 150 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.85 V VJ reverse recovery charge Q 20 C rr V = 600 V R max. reverse recovery current I 160 A RM di /dt = -2900 A/s T = 125C F VJ t reverse recovery time 320 ns rr I = 150 A V = 0 V F GE reverse recovery energy E 7 mJ rec thermal resistance junction to case R (per diode) 0.28 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20081209b 2008 IXYS All rights reserved 2 - 7