MWI15-12A7 IXYS

MWI 15-12A7 I = 30 A IGBT Module C25 V = 1200 V CES Sixpack V = 2.0 V Short Circuit SOA Capability CE(sat) typ. Square RBSOA Part name (Marking on product) MWI15-12A7 13 1 5 9 2 6 10 16 15 14 E72873 Pin con guration see outlines. 7 11 3 8 12 4 17 Features: Application: Package: NPT IGBT technology AC motor control UL registered low saturation voltage AC servo and robot drives Industry standard E2-pack positive temperature coef cient for power supplies package with copper base plate easy paralleling package designed for wave soldering low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting space savings reduced protection circuits IXYS reserves the right to change limits, test conditions and dimensions. 20161111a 2016 IXYS All rights reserved 1 - 6MWI 15-12A7 IGBTs Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C to 150C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES max. transient collector gate voltage V transient 30 V GEM collector current I T = 25C 30 A C25 C I T = 80C 20 A C80 C total power dissipation P T = 25C 140 W tot C V collector emitter saturation voltage I = 15 A V = 15 V T = 25C 2.0 2.6 V CE(sat) C GE VJ T = 125C 2.3 V VJ V gate emitter threshold voltage I = 0.6 mA V = V T = 25C 4.5 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.9 mA CES CE CES GE VJ T = 125C 0.8 mA VJ gate emitter leakage current I V = 0 V V = 20 V 200 nA GES CE GE input capacitance C V = 25 V V = 0 V f = 1 MHz 1000 pF ies CE GE total gate charge Q V = 600 V V = 15 V I = 15 A 70 nC G(on) CE GE C turn-on delay time t 100 ns d(on) current rise time t 75 ns r inductive load T = 125C VJ turn-off delay time t 500 ns d(off) V = 600 V I = 15 A CE C t current fall time 70 ns f V = 15 V R = 82 W GE G turn-on energy per pulse E 2.3 mJ on turn-off energy per pulse E 1.8 mJ off reverse bias safe operating area I RBSOA V = 15 V R = 82 W 35 A CM GE G L = 100 H clamped induct. load T = 125C VJ V = V - L di/dt CEmax CES S t short circuit safe operating area V = V V = 15 V T = 125C 10 s SC CE CES GE VJ (SCSOA) R = 82 W non-repetitive G R thermal resistance junction to case (per IGBT) 0.88 K/W thJC Diodes Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 150C 1200 V RRM VJ forward current I T = 25C 25 A F25 C I T = 80C 17 A F80 C forward voltage V I = 15 A V = 0 V T = 25C 2.4 2.7 V F F GE VJ T = 125C 1.7 V VJ max. reverse recovery current I V = 600 V 16 A RM R reverse recovery time t di /dt = -400 A/s T = 125C 130 ns rr F VJ E reverse recovery energy I = 15 A V = 0 V 0.49 mJ rec(off) F GE R thermal resistance junction to case (per diode) 2.1 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20161111a 2016 IXYS All rights reserved 2 - 6