MWI 200-06 A8 I = 225 A IGBT Modules C25 V = 600 V CES Sixpack V = 2.0 V CE(sat) typ. Short Circuit SOA Capability Square RBSOA 13, 21 Preliminary data 1 5 9 2 6 10 19 17 15 3 7 11 E72873 4 8 12 See outline drawing for pin arrangement 14, 20 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage low switching losses V T = 25C to 150C 600 V CES VJ switching frequency up to 30 kHz square RBSOA, no latch up V 20 V GES high short circuit capability I T = 25C 225 A C25 C positive temperature coefficient for I T = 80C 155 A easy parallelling C80 C MOS input, voltage controlled RBSOA V = 15 V R = 1.5 T = 125C I = 400 A GE VJ CM G ultra fast free wheeling diodes Clamped inductive load L = 100 H V V CEK CES solderable pins for PCB mounting package with copper base plate t V = V V = 15 V R = 1.5 T = 125C 10 s GE VJ SC CE CES G (SCSOA) non-repetitive Advantages P T = 25C 675 W tot C space savings reduced protection circuits package designed for wave soldering Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ Typical Applications min. typ. max. AC motor control V I = 200 A V = 15 V T = 25C 2.0 2.5 V VJ CE(sat) C GE AC servo and robot drives T = 125C 2.3 V VJ power supplies V I = 4 mA V = V 4.5 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 1.8 mA VJ CES CE CES GE T = 125C 1.5 mA VJ I V = 0 V V = 20 V 400 nA GES CE GE t 180 ns d(on) t 50 ns r Inductive load, T = 125C VJ t 300 ns d(off) V = 300 V I = 200 A CE C t 40 ns f V = 15 V R = 1.5 GE G E 4.6 mJ on E 6.3 mJ off C V = 25 V V = 0 V f = 1 MHz 9.0 nF ies CE GE Q V = 300 V V = 15 V I = 200 A 670 nC Gon CE GE C R (per IGBT) 0.18 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions. 20070912a 2007 IXYS All rights reserved 1 - 2 PHASE-OUTMWI 200-06 A8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 260 A F25 C I T = 80C 165 A F80 C Symbol Conditions Characteristic Values min. typ. max. IGBT (typ. at V = 15 V T = 125C) GE J V = 1.1 V R = 6 m V I = 200 A V = 0 V T = 25C 1.9 2.1 V VJ 0 0 F F GE T = 125C 1.5 V VJ I I = 120 A di /dt = -1000 A/s T = 125C 56 A Free wheeling Diode (typ. at T = 125C) VJ J RM F F V = 1.1 V R = 2 m t V = 300 V V = 0 V 100 ns 0 0 rr R GE R (per diode) 0.3 K/W thJC Thermal Response Module Symbol Conditions Maximum Ratings T operating -40...+125 C VJ T +150 C JM T -40...+125 C stg IGBT (typ.) V I 1 mA 50/60 Hz 2500 V~ ISOL ISOL C = 0.397 J/K R = 0.131 K/W th1 th1 C = 2.243 J/K R = 0.049 K/W th2 th2 M Mounting torque (M5) 3 - 6 Nm d Free wheeling Diode (typ.) C = 0.281 J/K R = 0.236 K/W th1 th1 Symbol Conditions Characteristic Values C = 1.945 J/K R = 0.064 K/W th2 th2 min. typ. max. R 1.8 m pin-chip d Creepage distance on surface 10 mm S d Strike distance in air 10 mm A R with heatsink compound 0.01 K/W thCH Weight 300 g Dimensions in mm (1 mm = 0.0394 ) 20070912a 2007 IXYS All rights reserved 2 - 2 PHASE-OUT