MWI80-12T6K IXYS

MWI 80-12T6K I = 80 A IGBT Module C25 V = 1200 V CES Sixpack V = 2.0 V Short Circuit SOA Capability CE(sat) typ. Square RBSOA Preliminary data Part name (Marking on product) MWI 80-12T6K 10, 23 14 18 22 8 13 17 21 11, 12 NTC 15, 16 19, 20 E72873 Pin configuration see outlines. 7 4 2 6 3 1 5 9, 24 Features: Application: Package: Trench IGBTs AC drives UL registered - low saturation voltage UPS Industry standard E1-pack - positive temperature coefficient for Welding easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits TM HiPerFRED diode: - fast reverse recovery - low operating forward voltage - low leakage current Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate IXYS reserves the right to change limits, test conditions and dimensions. 20170925b 2017 IXYS All rights reserved 1 - 4MWI 80-12T6K IGBTs Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C to 150C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES max. transient collector gate voltage V transient 30 V GEM collector current I T = 25C 80 A C25 C I T = 80C 56 A C80 C total power dissipation P T = 25C 270 W tot C V collector emitter saturation voltage I = 50 A V = 15 V T = 25C 2.0 2.4 V CE(sat) C GE VJ T = 125C 2.3 V VJ V gate emitter threshold voltage I = 2 mA V = V T = 25C 4.5 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 1 mA CES CE CES GE VJ T = 125C 0.8 mA VJ gate emitter leakage current I V = 0 V V = 20 V 400 nA GES CE GE input capacitance C V = 25 V V = 0 V f = 1 MHz 3600 pF ies CE GE total gate charge Q V = 600 V V = 15 V I = 50 A 470 nC G(on) CE GE C turn-on delay time t 90 ns d(on) current rise time t 50 ns r inductive load T = 125C VJ turn-off delay time t 520 ns d(off) V = 600 V I = 50 A CE C t current fall time 90 ns f V = 15 V R = 18 W GE G turn-on energy per pulse E 5 mJ on turn-off energy per pulse E 6.5 mJ off reverse bias safe operating area I RBSOA V = 15 V R = 18 W 100 A CM GE G L = 100 H clamped induct. load T = 125C VJ V = V - L di/dt CEmax CES S t short circuit safe operating area V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ (SCSOA) R = 18 W non-repetitive G R thermal resistance junction to case (per IGBT) 0.46 K/W thJC thermal resistance case to heatsink R (per IGBT) 0.2 K/W thCH Diodes Definitions Conditions Symbol Maximum Ratings max. repetitive reverse voltage V 1200 V RRM forward current I T = 25C 80 A F25 C I T = 80C 51 A F80 C Symbol Conditions Characteristic Values min. typ. max. forward voltage V I = 50 A T = 25C 2.3 2.6 V F F VJ T = 125C 1.6 V VJ max. reverse recovery current I V = 600 V I = 50 A 35 A RM R F t reverse recovery time di /dt = -600 A/s T = 100C 200 ns rr F VJ R thermal resistance junction to case (per diode) T = 25C 0.65 K/W thJC VJ R thermal resistance case to heatsink (per diode) 0.25 K/W thCH IXYS reserves the right to change limits, test conditions and dimensions. 20170925b 2017 IXYS All rights reserved 2 - 4