X-On Electronics has gained recognition as a prominent supplier of UGE3126AY4 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. UGE3126AY4 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

UGE3126AY4 IXYS

UGE3126AY4 electronic component of IXYS
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Part No.UGE3126AY4
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2 Amps 24000V
Datasheet: UGE3126AY4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 72.3236
5 : USD 70.561
10 : USD 67.1996
25 : USD 67.1996
100 : USD 67.1996
250 : USD 67.1129
500 : USD 64.2619
1000 : USD 62.3356
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0
MOQ : 1
Multiples : 1
1 : USD 126.9044
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We are delighted to provide the UGE3126AY4 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UGE3126AY4 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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UGE 3126 AY4 High Voltage Rectifiers V = 24000 V RRM I = 2.0 A F(AV)M Anode V Standard Power Designation RRM V Types 24000 UGE 3126 AY4 Si-E 9000 / 4000-0.7 Cathode Symbol Conditions Ratings Features Hermetically sealed Epoxy I 5A F(RMS) Use in oil I air self cooling, T = 45C F(AV)M amb Avalanche characteristics - without cooling plate 0.8 A - with colling plate 1.0 A Applications forced air cooling: X-Ray equipment v = 3 m/s, T = 35C amb Electrostatic dust precipitators - without cooling plate 1.4 A Electronic beam welding - with cooling plate 1.7 A Lasers Cable test equipment oil cooling, T = 35C amb - without cooling plate 2.0 A Advantages - with cooling plate 2.0 A Simple mounting P T = 150C t = 10 s 1.6 kW RSM (vj) p Improved temperature and power cycling I non repetitive, 50 c/s (for 60 c/s add 10%) FSM Reduced protection circuits T = 45C t = 10 ms 70 A (vj) p Series and parallel operation T = 150C t = 10 ms 60 A (vj) p T -40...+150 C amb T -40...+150 C stg T 150 C (vj) Dimensions in mm (1 mm = 0.0394 ) Weight 127 g Symbol Conditions Characteristic Values I T = 150C V = V 1 mA R (vj) R RRM V I =3 A 18 V F F T = 25C (vj) V T = 150C 12 V TO (vj) r T = 150C 1.8 T (vj) 2 a f = 50Hz 5 x 9,81 m/s M 8Nm d Data according to IEC 60747-2 IXYS reserve the right to change limits, test conditions and dimensions. 2003 IXYS All rights reserved 1 - 2UGE 3126 AY4 A 100 10 A a b 90 9 I FSM 80 I F 8 T(vj) =150C 70 7 T(vj) = 25C 60 6 50 5 40 a 4 30 3 b 20 2 10 1 0 0 -3 -2 -1 0 1 10 10 10 10 s 10 0 2 4 6 8 10 12 14 16 18 20 22 24V t V F Fig. 1: Forward characteristics Fig. 2: Characteristics of maximum permissible current Instantaneous forward current I as a function of instantaneous forward The curves show the non repetitive peak one cycle surge forward F voltage drop V for junction temperature T = 25C and T = 150C current I as a function of time t and serve for rating protective F (vj) (vj) FSM a = Mean value characteristic devices. b = Limit value characteristic a = Initial state T = 45C (vj) b = Initial state T = 150C (vj) 4 3 10 A W P RSM 3 I I 10 F(AV) FAV 180 2 6 2 10 5 4 3 1 10 2 1 1 0 10 0 -1 10 0 30 60 90 120 150C -6 -5 -4 -3 -2 s 10 10 10 10 10 T A t Fig. 3: Power loss Fig. 4: Load diagramm Non repetitive peak reverse power loss P as a function of time t, Mean forward current I of one module for a sine half wave for various RSM F(AV) T = 150C cooling modes as a function of the cooling medium temperature T for a (vj) amb resistive load (horizontal mounting). Cooling modes 1 = air self cooling without cooling plate 2 = air self cooling with cooling plate 3 = forced air cooling without cooling plate 4 = forced air cooling with cooling plate 5 = oil cooling without cooling plate 6 = oil cooling with cooling plate 2003 IXYS All rights reserved 2 - 2

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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