VBE60-12A IXYS

VBE60-12A V = 1200 V RRM HiPerFRED I = 60 A DAV t = 60 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number VBE60-12A Backside: isolated 3 2 4 1 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 3000 Very low leakage current switching devices Industry standard outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Base plate: Copper Very soft recovery behaviour Rectifiers in switch mode power internally DCB isolated Avalanche voltage rated for reliable operation supplies (SMPS) Advanced power cycling Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b 2019 IXYS all rights reservedVBE60-12A Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 1200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 2 0 0 V T = 25C 250 A R R VJ V = 1 2 0 0 V T = 1 2 5 C 1 mA R VJ forward voltage drop V I = 3 0 A T = 25C 2.68 V F F VJ I = 6 0 A 3.15 V F T = C 1.73 V I = 3 0 A 150 F VJ I = 6 0 A 2.22 V F bridge output current T = 7 0 C T = 1 5 0 C 60 A I DAV C VJ rectangular d = 0.5 V T = 1 5 0 C 1.31 V threshold voltage F0 VJ for power loss calculation only slope resistance r 14 m F thermal resistance junction to case 1.15 K/W R thJC thermal resistance case to heatsink K/W R 0.1 thCH P total power dissipation T = 25C 110 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 200 A I R FSM VJ junction capacitance V = 6 0 0 V f = 1 MHz T = 25C 12 pF C J R VJ I max. reverse recovery current T = 25 C 8.5 A RM VJ I = 30 A V = 600 V T = 100C 13 A F R VJ reverse recovery time -di /dt = 200A/s T = 25 C 60 ns t rr F VJ T = 100C 170 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b 2019 IXYS all rights reserved