VCO132-12io7 IXYS

Advanced Technical Information VCO 132 I = 200 A Thyristor Modules TRMS I = 130 A TAVM ECO-PAC 2 V = 1200/1600 V RRM ACE-1 V V RSM RRM V V Typ DSM DRM E-3 V V K-12 1300 1200 VCO 132-12io7 1700 1600 VCO 132-16io7 SVX-18 Features Symbol Conditions Maximum Ratings Isolation voltage 3600 V~ I 200 A TRMS Planar glass passivated chips I T = 85C T = 130C 180 sine 130 A TAVM C VJ Low forward voltage drop I T = 45C t = 10 ms (50 Hz) 3600 A TSM VJ Leads suitable for PC board soldering V = 0 t = 8.3 ms (60 Hz) 3850 A R Applications T = 125C t = 10 ms (50 Hz) 3200 A VJ V = 0 t = 8.3 ms (60 Hz) 3420 A R DC Motor control 2 2 Light and temperature control I t T = 45C t = 10 ms (50 Hz) 64 800 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 62 300 A s Softstart AC motor controller R Solid state switches 2 T = 125C t = 10 ms (50 Hz) 51 200 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 49 100 A s R Advantages (di/dt) T = 125C repetitive, I = 250 A 150 A/s cr VJ T Easy to mount with two screws f = 50 Hz t = 200 s p Space and weight savings 2 V = / V D 3 DRM Improved temperature and power I = 0.5 A non repetitive, I = I 500 A/s G T TAVM cycling di /dt = 0.5 A/s G High power density 2 Small and light weight (dv/dt) T = 125C V = / V 1000 V/s cr VJ D 3 DRM R = method 1 (linear voltage rise) GK P T = 125C t = 30 ms < 10 W GM VJ p I = I t = 300 ms < 5 W T T(AV)M p P 0.5 W GAVM V 10 V RGM T -40...+130 C VJ T 150 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I < 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M4) 1.5 - 2.0 Nm d 14 - 18 lb.in. Weight Typical including screws 24 g Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20170321a 2017 IXYS All rights reserved 1 - 2 VCO 132Advanced Technical Information VCO 132 Symbol Conditions Characteristic Values typ. max. I , I V / V = V / V T = 125C 10 mA D R R D RRM DRM VJ V I = 200 A T = 25C 1.3 V T T VJ V For power-loss calculations only 0.80 V T0 r 1.65 m t V V = 6 V T = 25C 1.5 V GT D VJ T = -40C 1.6 V VJ I V = 6 V T = 25C 300 mA GT D VJ T = -40C 400 mA VJ 2 V V = / V T = 125C 0.2 V GD D 3 DRM VJ I 10 mA GD I t = 10 s T = 25C 450 mA L p VJ I = 0.5 A di /dt = 0.5 A/s G G I V = 6 V R = T = 25C 200 mA H D GK VJ t V = V T = 25C 2 s gd D DRM VJ I = 0.5 A di /dt = 0.5 A/s G G R 0.25 K/W thJC per thyristor DC current R 0.35 K/W thJH d Creeping distance on surface 11.2 mm S d Creepage distance in air 5.0 mm A 2 a Maximum allowable acceleration 50 m/s Dimensions in mm (1 mm = 0.0394 ) IXYS reserves the right to change limits, test conditions and dimensions. 20170321a 2017 IXYS All rights reserved 2 - 2