V = 200 V VMM 45-02F Dual Power DSS I = 45 A TM D25 HiPerFET Module R = 45 m DS(on) Phaseleg Configuration TM High dv/dt, Low t , HDMOS Family rr 6 TO-240 AA 3 1 2 4 5 1 5 4 2 Preliminary Data 6 3 1 = Drain 1 2 = Source 1, Drain 2 3 = Source 2 4 = Kelvin Source 1 5 = Gate 1 6 = Gate 2 Symbol Conditions Maximum Ratings Features V T = 25C to 150C 200 V DSS J Two MOSFET s in phaseleg config. V T = 25C to 150C R = 10 k 200 V DGR J GS International standard package Direct copper bonded Al O ceramic 2 3 V Continuous 20 V GS base plate V Transient 30 V GSM Isolation voltage 3600 V~ TM I T = 25C 45 A Low R HDMOS process D25 C DS(on) I T = 80C 34 A D80 C I T = 25C, t = 10 s, pulse width limited by T 180 A DM C p JM Applications P T = 25C 190 W tot C Switched-mode and resonant-mode T -40 ... +150 C J power supplies T 150 C JM Uninterruptible power supplies (UPS) T -40 ... +125 C stg V 50/60 Hz t = 1 min 3000 V~ ISOL I 1 mA t = 1 s 3600 V~ ISOL Advantages M Mounting torque(M5 or 10-32 UNF) 2.5-4.0/22-35 Nm/lb.in. d Easy to mount with two screws Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in. Space and weight savings High power density Weight Typical including screws 90 g Low losses Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. V V = 0 V, I = 1 mA 200 V DSS GS D V V = V , I = 4 mA 2 4 V GS(th) DS GS D I V = 20 V DC, V = 0 500 nA GSS GS DS I V = V,V = 0 V, T = 25C 15 A DSS DS DSS GS J V = 0.8 V ,V = 0 V, T = 125C 1 mA DS DSS GS J R V = 10 V, I = 0.5 I 39 45 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2% Data per MOSFET unless otherwise stated. 2000 IXYS All rights reserved 1 - 2 948 VMM 45-02F Symbol Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394 ) (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I pulsed 20 30 S fs DS D D25 C 4800 7500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 900 2250 pF oss GS DS C 310 750 pF rss t 40 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 45 ns r GS DS DSS D D25 t R = 1 (External), resistive load 300 ns d(off) G t 45 ns f Q 190 225 nC g Q V = 10 V, V = 0.5 V , I = 0.5 I 35 55 nC gs GS DS DSS D D25 Q 95 115 nC gd R 0.63 K/W thJC R heatsink compound applied 0.3 K/W thCH d Creepage distance on surface 12.7 mm S d Strike distance through air 9.6 mm A 2 a Allowable acceleration 50m/s Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Conditions min. typ. max. I V = 0 V 45 A S GS I Repetitive pulse width limited by T 180 A SM JM V I = I V = 0 V, 0.9 1.2 V SD F S GS Pulse test, t 300 s, duty cycle d 2% t I = I , -di/dt = 100 A/s, 200 400 ns rr F S V = 100 V, V = 0 V DS GS 2000 IXYS All rights reserved 2 - 2