X-On Electronics has gained recognition as a prominent supplier of VMO1200-01F Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. VMO1200-01F Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

VMO1200-01F IXYS

VMO1200-01F electronic component of IXYS
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Part No.VMO1200-01F
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: IXYS Discrete Semiconductor Modules 1200 Amps 100V
Datasheet: VMO1200-01F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 210.6625
10 : USD 193.6908
25 : USD 189.4181
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0
MOQ : 1
Multiples : 1
1 : USD 158.5529
6 : USD 153.0952
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0
MOQ : 1
Multiples : 1
1 : USD 218.4375
N/A

Shipping Restricted
   
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We are delighted to provide the VMO1200-01F from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VMO1200-01F and other electronic components in the Discrete Semiconductor Modules category and beyond.

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VMO 1200-01F V = 100 V DSS PolarHT Module I = 1220 A D25 N-Channel Enhancement Mode R = 1.25 m max. DS(on) D D S G KS KS S G Features MOSFET PolarHT MOSFET technology Symbol Conditions Maximum Ratings - low R DSon V T = 25C to 150C 100 V DSS VJ - dv/dt ruggedness V 20 V GS - fast intrinsic reverse diode package I T = 25C 1220 A D25 C - low inductive current path I T = 80C 970 A D80 C - screw connection to high current I T = 25C (diode) 1220 A F25 C main terminals I T = 80C (diode) 970 A F80 C - use of non interchangeable connectors for auxiliary terminals Symbol Conditions Characteristic Values possible (T = 25C, unless otherwise specified) VJ - Kelvin source terminals for easy drive min. typ. max. - isolated DCB ceramic base plate R V = 10 V I = I T = 25C 1.00 1.25 m DSon GS D D80 VJ T = 125C 1.62 2.00 m Applications VJ V V = 20 V I = 3 mA 3 5 V GS(th) DS D converters with high power density for I V = 0.8 V V = 0 V T = 25C 0.3 mA - main and auxiliary AC drives of DSS DS DSS GS VJ T = 125C 6 mA electric vehicles VJ - DC drives I V = 20 V V = 0 V 1.2 A GSS GS DS - power supplies Q 1710 nC g Q V = 10 V V = 50 V I = 1000 A 396 nC gs GS DS D Q 1020 nC gd t 360 ns d(on) t 1620 ns r inductive load t 460 ns d(off) V = 10 V V = 50 V GS DS t 1020 ns f I = 1000 A R = 1.8 T = 25C D G VJ E 7.7 mJ on R = R + R G G ext out driver E 62.3 mJ off E 0.57 mJ rec t 400 ns d(on) t 1640 ns r inductive load t 560 ns d(off) V = 10 V V = 50 V GS DS t 820 ns f I = 1000 A R = 1.8 T = 125C D G VJ E 8.5 mJ on R = R + R G G ext out driver E 58.9 mJ off E 0.82 mJ rec R 0.053 K/W thJC R with heat transfer paste (IXYS test setup) 0.065 0.088 K/W thJH 20100614b 2010 IXYS All rights reserved 1 - 6VMO 1200-01F Source Drain Diode Symbol Conditions Characteristic Values min. typ. max. V I = 1000 A V = 0 V T = 25C 1.03 V SD F GS VJ T = 125C 0.96 V VJ t 300 ns rr V = 50 V I = 1000 A T = 25C DS F VJ Q 12.7 C rr di /dt = 650 A/s F I 72 A RM t 340 ns rr V = 50 V I = 1000 A T = 125C DS F VJ Q 18 C rr di /dt = 630 A/s F I 88 A RM Module Ratings Symbol Conditions min. typ. max. T -40 150 C VJ T -40 125 C stg V I < 1 mA, 50/60 Hz 3600 V~ ISOL ISOL M Mounting torque (M6) 2.25 2.75 Nm d Terminal connection torque (M6) 4.5 5.5 Nm Weight 250 g Product Marking Marking on Delivering Ordering Part Name Base Qty Code Key Product Mode VMO1200-01F VMO1200-01F 501051 Standard Box 2 20100614b 2010 IXYS All rights reserved 2 - 6

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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