VUM 24-05N I =35A Power MOSFET Stage D25 V = 500 V DSS for Boost Converters R =0.12 DS(on) Module for Power Factor Correction 4 3 2 513 278 46 1 V V Type RRM (Diode) DSS VV 600 500 VUM 24-05N 8 7 6 5 Symbol Conditions Maximum Ratings Features V T = 25C to 150C 500 V Package with DCB ceramic base plate DSS VJ V T = 25C to 150C R = 10 k 500 V Soldering connections for PCB DGR VJ GS V Continuous 20 V mounting GS Isolation voltage 3600 V~ I T = 85C 24 A D S TM Low R HDMOS process DS(on) I T = 25C 35 A D S Low package inductance for high I T = 25C, t = 95 A DM S p speed switching P T = 85C 170 W Ultrafast boost diode D S Kelvin source for easy drive I V = 0 V, T = 25C 24 A S GS S I V = 0 V, T = 25C, t = 95 A SM GS S p Applications V 600 V RRM Power factor pre-conditioner for I T = 85C, rectangular = 0.5 40 A dAV S SMPS, UPS, battery chargers and I T = 45C, t = 10 ms (50 Hz) 300 A FSM VJ inverters t = 8.3 ms (60 Hz) 320 A Boost topology for SMPS including 1~ rectifier bridge T = 150C, t = 10 ms (50 Hz) 260 A VJ Power supply for welding equipment t = 8.3 ms (60 Hz) 280 A P T = 85C 36 W S Advantages V 800 V RRM 3 functions in one package I T = 85C, sinus 180 40 A dAV S Output power up to 5 kW No external isolation I T = 45C, t = 10 ms (50 Hz) 300 A FSM VJ Easy to mount with two screws t = 8.3 ms (60 Hz) 320 A Suitable for wave soldering T = 150C, t = 10 ms (50 Hz) 260 A VJ High temperature and power cycling t = 8.3 ms (60 Hz) 280 A capability P T = 85C 33 W Fits easiliy to all available PFC S controller ICs T -40...+150 C VJ T 150 C JM T -40...+150 C stg V 50/60 Hz t = 1 min 3000 V~ ISOL I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2-2.5/18-22 Nm/lb.in. d Weight 28 g Pulse width limited by T VJ IXYS reserves the right to change limits, test conditions and dimensions 2007 IXYS All rights reserved 1 - 4 Module Rectifier Diodes Boost Diode MOSFET 20070605cVUM 24-05N Symbol Conditions Characteristic Values 350 A V = 0.8V (T = 25C, unless otherwise specified) VJ R RRM min. typ. max. 300 V V = 0 V, I = 2 mA 500 V DSS GS D 250 V V = 20 V, I = 20 mA 2 5 V GS(th) DS D I T = 45C FSM VJ I V = 20 V, V = 0 V 500 nA GSS GS DS 200 I V = 500 V, V = 0 V 2 mA DSS DS GS 150 R T = 25C 0.12 DS(on) VJ R T = 25C 1.5 Gint VJ 100 g V = 15 V, I = 12 A 30 S T = 125C fs DS DS VJ 50 V I = 24 A, V = 0 V 1.5 V DS DS GS t V = 250 V, I = 12 A, V = 10 V 100 ns d(on) DS DS GS 0 t Zgen. = 1 , L-load 220 ns d(off) 0.001 0.01 0.1 s 1 t C 8.5 nF iss Fig. 1 Non-repetitive peak surge C V = 25 V, f = 1 MHz, V = 0 V 0.9 nF oss DS GS current (Rectifier Diodes) C 0.3 nF rss Q V = 250 V, I = 12 A, V = 10 V 350 nC g DS D GS R with heat transfer paste 0.38 K/W thJH 500 2 V I = 22 A T = 25C 1.65 V F F VJ A s T =150C 1.4 V VJ 400 I V = 600 V, T = 25C 1.5 mA R R VJ V = 480 V, T = 25C 0.25 mA R VJ 300 T =125C 7 mA VJ 2 T = 45C I t VJ V For power-loss calculations only 1.14 V T0 r T = 125C 10 m T VJ 200 I I = 30 A -di /dt = 240 A/s RM F F T = 125C V = 350 V, T = 100C 10 11 A VJ R VJ 100 R with heat transfer paste 1.8 K/W thJH V I = 20 A, T = 25C 1.4 V F F VJ 0 T =125C 1.4 V VJ 11ms0 t I V = 800 V T = 25C 0.25 mA R R VJ 2 Fig. 2 I t for fusing (Rectifier Diodes) V = 640 V, T =125C 2 mA R VJ V For power-loss calculations only 1.05 V T0 r T = 125C 16 m T VJ R with heat transfer paste 2 K/W thJH Dimensions in mm (1 mm = 0.0394 ) IXYS reserves the right to change limits, test conditions and dimensions 2007 IXYS All rights reserved 2 - 4 Rectifier Diodes Boost Diode MOSFET 20070605c