VVZ39-12HO7 IXYS

VTO 39 VVZ 39 I = 39 A dAV Three Phase Recti er Bridge V = 800/1200 V RRM Preliminary data H J M H J M F F VVZ 39 V V Type RSM RRM V V DSM DRM V V N N L L 900 800 VTO 39-08ho7 VVZ 39-08ho7 I I B E G 1300 1200 VTO 39-12ho7 VVZ 39-12ho7 A A E72873 VVZ 39 VTO 39 VTO 39 Symbol Conditions Maximum Ratings I T = 85C module 39 A dAV C I T = 85C (180 sine per thyristor) 16 A TAVM C I T = 45C t = 10 ms (50 Hz) 200 A TSM VJ V = 0 t = 8.3 ms (60 Hz) 210 A R T = T t = 10 ms (50 Hz) 180 A VJ VJM E72873 V = 0 t = 8.3 ms (60 Hz) 190 A R 2 2 I t T = 45C t = 10 ms (50 Hz) 200 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 150 A s R Features 2 T = T t = 10 ms (50 Hz) 160 A s VJ VJM 2 Package with DCB ceramic base plate V = 0 t = 8.3 ms (60 Hz) 150 A s R Isolation voltage 3000 V~ (di/dt) T = T repetitive I = 20 A 100 A/s cr VJ VJM T Planar passivated chips f = 50 Hz t = 200 s p Low forward voltage drop 2 V = / V non repetitive 500 A/s D 3 DRM Leads suitable for PC board soldering I = 0.15 A I = I G T TAVM di /dt = 0.15 A/s G Applications 2 (dv/dt) T = T V = / V 500 V/s cr VJ VJM D 3 DRM Supplies for DC power equipment R = h, method 1 (linear voltage rise) GK Input recti ers for PWM inverter V 10 V RGM Battery DC power supplies Field supply for DC motors P T = T t = 30 s < 5 W GM VJ VJM p I = I t = 300 s < 2.5 W T TAVM p Advantages P 0.5 W GAVM Easy to mount with two screw T -40...+125 C VJ Space and weight savings T 125 C VJM Improved temperature & T -40...+125 C stg power cycling capability V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL Small and light weight I < 1 mA t = 1 s 3000 V~ ISOL M Mounting torque (M4) 1.5 - 2 Nm d 14 - 18 lb.in. Data according to IEC 60747 and refer to a single Weight Typ. 18 g diode unless otherwise stated for resistive load at bridge output. Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. 20200117b 2020 IXYS All rights reserved 1 - 2VTO 39 VVZ 39 Symbol Conditions Characteristic Values I I V = V V = V T = T < 5 mA D R R RRM D DRM VJ VJM V I = 20 A T = 25C < 1.6 V T T VJ V For power-loss T = 125C 0.85 V T0 VJ r calculations only 27 m T V V = 6 V T = 25C < 1.5 V GT D VJ T = -40C < 2.5 V VJ I V = 6 V T = 25C < 25 mA GT D VJ T = -40C < 50 mA VJ 2 V V = / V T = T < 0.2 V GD D 3 DRM VJ VJM I < 3 mA GD I t = 10 s T = 25C < 75 mA L p VJ I = 0.1 A di /dt = 0.1 A/s G G I V = 6 V R = h T = 25C < 50 mA H D GK VJ t V = V T = 25C < 2 s gd D DRM VJ I = 0.1 A di /dt = 0.1 A/s G G R per thyristor / diode DC 1.3 K/W thJC per module 0.22 K/W R per thyristor / diode DC 1.8 K/W thJH per module 0.3 K/W d Creeping distance on surface 11.2 mm S d Creepage distance in air 5 mm A 2 a Max. allowable acceleration 50 m/s Dimensions in mm (1 mm = 0.0394) 0.3 0.3 0.3 0.3 8.6 8.6 8.6 8.6 2x M4 2x M4 H I J K L M N H I J K L M N 5 6 7 8 5 6 7 8 1 2 3 4 1 2 3 4 A B CDE F G A B CDE F G R 0.75 R 0.75 39 39 0.2 0.2 47 47 VVZ 39 VTO 39 IXYS reserves the right to change limits, test conditions and dimensions. 20200117b 2020 IXYS All rights reserved 2 - 2 +0.5 20.3 - 0.2 R 2.15 1 0.5 15.2 0.5 8 18.4 0.2 30.3 +0.5 20.3 - 0.2 R 2.15 1 0.5 15.2 0.5 8 18.4 0.2 30.3