VWO 140 Three Phase I = 3x 143 A RMS V = 1200-1600 V AC Controller Modules RRM Preliminary data C1 E1 K1 M1 S1 V1 V V Type RSM RRM V V DSM DRM VV 1200 1200 VWO 140-12io1 C10 E10 K10 M10 S10 V10 1400 1400 VWO 140-14io1 1600 1600 VWO 140-16io1 pin configuration see outlines Symbol Conditions Maximum Ratings Features I T = 85C 50 - 400 Hz (per phase) 101 A Thyristor controller for AC (circuit W3C RMS C I T = 85C 50 - 400 Hz (per phase) for 10 sec. 143 A acc. to IEC) for mains frequency RMS C I T = 85C (180 sine) 46 A Package with DCB base plate TAVM C Isolation voltage 3600 V~ I T = 45C t = 10 ms (50 Hz), sine 1150 A TSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 1240 A R UL applied T = 125C t = 10 ms (50 Hz), sine 1040 A VJ V = 0 t = 8.3 ms (60 Hz), sine 1120 A Applications R 2 2 I t T = 45C t = 10 ms (50 Hz), sine 6610 A s Switching and control of VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 6460 A s R three phase AC circuits 2 Softstart AC motor controller T = 125C t = 10 ms (50 Hz), sine 5410 A s VJ Solid state switches 2 V = 0 t = 8.3 ms (60 Hz), sine 5270 A s R Light and temperature control (di/dt) T =125C repetitive, I = 45 A 150 A/s cr VJ T f = 50 Hz, t = 200 s P Advantages 2 V = / V D 3 DRM Easy to mount with two screws I = 0.45 A non repetitive, I = I 500 A/s G T TAVM Space and weight savings di /dt = 0.45 A/s G Improved temperature and power cycling 2 (dv/dt) T =125C V = / V 1000 V/s cr VJ DR 3 DRM High power density R = method 1 (linear voltage rise) GK P T = 125C t = 30 s 10 W GM VJ p G I = I t = 300 s 5 W T TAVM p P 0.5 W GAVM V 10 V RGM T -40...+125 C VJ T for 10 sec. 150 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I < 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2-2.5 Nm. d Recommended replacement: 18-22 lb.in. 3x MMO90-12/14/16 io6 Weight typ. 80 g 3x CLA110MB1200NA Data according to IEC 60747 refer to a single thyristor unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20080828a 2008 IXYS All rights reserved 1 - 2 p h a s e - o u tZ Y VWO 140 VWO 140 Symbol Conditions Characteristic Values I , I T = 125C V = V V = V <5 mA D R VJ R RRM D DRM V I = 140 A T = 25C < 1.5 V T T VJ V For power-loss calculations only 0.85 V T0 r 5.2 m T V V = 6 V T = 25C < 1.5 V GT D VJ T = -40C < 1.6 V VJ I V = 6 V T = 25C < 100 mA GT D VJ T = -40C < 200 mA VJ 2 V T =125C V = / V < 0.2 V GD VJ D 3 DRM I <5 mA GD I T = 25C t = 10 s < 450 mA L VJ P I = 0.45 A di /dt = 0.45 A/s G G I T = 25C V = 6 V R = < 200 mA H VJ D GK t T = 25C V = V <2 s gd VJ D DRM I = 0.45 A di /dt = 0.45 A/s G G t T =125C I = 20 A, t = 200 s di/dt = -10 A/s typ. 150 s q VJ T P 2 V = 100 V dv/dt = 15 V/s V = / V R D 3 DRM R per thyristor sine 180el 0.6 K/W thJC per module 0.1 K/W R per thyristor sine 180el 0.7 K/W thJK per module 0.117 K/W d Creeping distance on surface 12.7 mm S d Creepage distance in air 9.4 mm A 2 a Max. allowable acceleration 50 m/s Detail Z M 5:1 Detail Y M 2:1 Dimensions in mm (1 mm = 0.0394 ) 1.5 (DIN 46 431) 6.1 2.5 0.50.2 2.1 G 65 38 93 40.4 78.5 0.3 25.0 0.3 4x45 18.0 0.3 3.5 0.3 R1 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 10 40 0.15 80 0.5 0.3 Aufdruck der Typenbezeichnung (Klebeetikett) IXYS reserves the right to change limits, test conditions and dimensions. 20080828a 2008 IXYS All rights reserved 2 - 2 p h a s e - o u t R R 15.2 15.2 0.3 0.3 0.25 5.5 (4) A A B B C C D D E E F F G G H H I I 1.5 K K L L 6.0 M M N N O O P P R R S S T T U U V V W W 32 13 0.2 17 0.25 1.5 +0.6-0.3 4.50.5 2