VWO35-08HO7 V = 800 V RRM Thyristor Module I = 16 A TAV V = 1.19 V T AC Controlling 3~ full-controlled Part number VWO35-08HO7 Backside: isolated H A J C M F I B L E N G Features / Advantages: Applications: Package: ECO-PAC1 Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 3000 Planar passivated chip Softstart AC motor control Industry standard outline Long-term stability DC Motor control RoHS compliant Direct Copper Bonded Al2O3-ceramic Power converter Soldering pins for PCB mounting AC power control Height: 9 mm Lighting and temperature control Base plate: DCB ceramic Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200120b 2020 IXYS all rights reservedVWO35-08HO7 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 900 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 800 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 8 0 0 V T = 25C 50 A R/D R/D VJ V = 8 0 0 V T = 1 2 5 C 2 mA R/D VJ forward voltage drop V I = 1 5 A T = 25C 1.23 V T T VJ I = 3 0 A 1.48 V T T = C 1.19 V I = 1 5 A 125 T VJ I = 3 0 A 1.51 V T average forward current T = 8 5 C T = 1 2 5 C 16 A I TAV C VJ RMS forward current per phase I 180 sine 35 A RMS V T = 1 2 5 C 0.88 V threshold voltage T0 VJ for power loss calculation only slope resistance r 21 m T 1.3 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.5 K/W thCH P total power dissipation T = 25C 77 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 200 A I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 215 A R t = 10 ms (50 Hz), sine T = 1 2 5 C A 170 VJ t = 8,3 ms (60 Hz), sine V = 0 V 185 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 200 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 190 As R t = 10 ms (50 Hz), sine T = 1 2 5 C 145 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 140 As R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 7 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 2 5 C 5 W GM P C t = 300 s 2.5 W P 0.5 W P average gate power dissipation GAV critical rate of rise of current T = 125C f = 50 Hz repetitive, I = 45 A 100 (di/dt) A/s cr VJ T 0.15 t = 2 0 0 s di /dt = A/s P G I = 0.15A V = V non-repet., I = 15 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 125C 500 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 1.5 V GT D VJ T = -40C 2.5 V VJ gate trigger current V = 6 V T = 25C 25 mA I VJ GT D T = -40C 50 mA VJ gate non-trigger voltage V V = V T = 125C 0.2 V GD D DRM VJ gate non-trigger current I 3 mA GD latching current t = 10 s T = 25C 75 mA I VJ L p I = 0.1A di /dt = 0.1 A/s G G holding current I V = 6 V R = T = 25C 50 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.1A di /dt = 0.1 A/s G G turn-off time V = 100 V I = 15A V = V T =100 C 150 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 20 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200120b 2020 IXYS all rights reserved