XS170 Multifunction Telecom Switch INTEGRATED CIRCUITS DIVISION Description Parameter Rating Units Blocking Voltage 350 V The XS170 integrated circuit device combines a P 350V, 100mA, 50, normally open (1-Form-A) relay Load Current 100 mA / mA rms DC with an optocoupler in a single package. The relay On-Resistance (max) 50 uses optically coupled MOSFET technology to provide 3750V of input to output isolation. rms Features Its optically coupled outputs, which use the patented 3750V Input/Output Isolation rms OptoMOS architecture, are controlled by a highly Low Drive Power Requirements (TTL/CMOS efficient GaAIAs infrared LED. Compatible) Telecom circuit designers, using the XS170, can now FCC Compatible take advantage of two discrete functions in a single VDE Compatible component that uses less space than traditional No Moving Parts discrete component solutions. High Reliability Arc-Free With No Snubbing Circuits Approvals No EMI/RFI Generation Small 8-Pin Package UL Recognized Component: File E76270 Machine Insertable, Wave Solderable CSA Certified Component: Certificate 1175739 Surface Mount and Tape & Reel Versions Available EN/IEC 60950 Certified Component: TUV Certificate: B 10 05 49410 006 Applications Ordering Information Telecommunications Telecom Switching Part Description Tip/Ring Circuits XS170 8-Pin DIP (50/Tube) Modem Switching (Laptop, Notebook, Pocket Size) XS170P 8-Pin Flatpack (50/Tube) Hook Switch XS170PTR 8-Pin Flatpack (50/Tube) Dial Pulsing XS170S 8-Pin Surface Mount (50/Tube) Ground Start XS170STR 8-Pin Surface Mount (1000/Reel) Ringing Injection Instrumentation Multiplexers Pin Configuration Data Acquisition 1 8 Electronic Switching + LED - Relay Load - Relay (MOSFET Output) I/O Subsystems 2 7 LED - Relay Load - Relay (MOSFET Output) Meters (Watt-Hour, Water, Gas) 3 6 Collector - Phototransistor LED - Phototransistor /+ Medical Equipment-Patient/Equipment Isolation 4 5 Security Emitter - Phototransistor LED - Phototransistor +/ Aerospace Industrial Controls Switching Characteristics of Normally Open Devices Form-A I F 90% 10% I LOAD t t on off Pb e3 DS-XS170-R03 1 www.ixysic.comXS170 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to Relay Blocking Voltage 350 V P the device. Functional operation of the device at conditions Reverse Input Voltage 5 V beyond those indicated in the operational sections of this 1 Input Power Dissipation 150 mW data sheet is not implied. Relay Input Control Current 50 mA Peak (10ms) 1 A Detector Input Control Current 100 mA 2 Total Power Dissipation 800 mW Isolation Voltage, Input to Output 3750 V rms Operational Temperature -40 to +85 C Storage Temperature -40 to +125 C 1 Derate linearly 1.33 mW / C 2 Derate linearly 6.67 mW / C Electrical Characteristics 25C: Relay Section Parameter Conditions Symbol Min Typ Max Units Output Characteristics Load Current, Continuous Continuous - I - - 100 mA / mA L rms DC Peak t=10ms I - - 350 mA LPK P On-Resistance I =120mA R -33 50 L ON Off-State Leakage Current V =350V I -- 1 A L LEAK Switching Speeds Turn-On t -- 5 on I =5mA, V =10V ms F L Turn-Off t -- 5 off Output Capacitance V =50V, f=1MHz C -25 - pF L OUT Input Characteristics Input Control Current to Activate I =120mA I -- 2 mA L F Input Control Current to Deactivate - I 0.4 0.7 - mA F Input Voltage Drop I =5mA V 0.9 1.2 1.4 V F F Reverse Input Current V =5V I -- 10 A R R Common Characteristics Input to Output Capacitance - C -3 - pF I/O Electrical Characteristics 25C: Detector Section Parameter Conditions Symbol Min Typ Max Units Output Characteristics Phototransistor Blocking Voltage I =10ABV 20 50 - V C CEO Phototransistor Dark Current V =5V, I =0mA I - 50 500 nA CE F CEO Saturation Voltage I =2mA, I =16mA V - 0.3 0.5 V C F SAT Current Transfer Ratio I =6mA, V =0.5V CTR 33 100 - % F CE Input Characteristics Input Control Current I =2mA, V =0.5V I -2 6 mA C CE F Input Voltage Drop I =5mA V 0.9 1.2 1.4 V F F Input Current (Detector must be off) I =1A, V =5V I 525 - A C CE F Isolation, Input to Output - V 3750 - - V I/O rms Common Characteristics Input to Output Capacitance - C -3 - pF I/O R03 2 www.ixysic.com