KWMFP25R12NS3 JUNSHINE

KWMFP25R12NS3 electronic component of JUNSHINE
KWMFP25R12NS3 JUNSHINE
KWMFP25R12NS3 IGBT Transistors
KWMFP25R12NS3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of KWMFP25R12NS3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. KWMFP25R12NS3 IGBT Transistors are a product manufactured by JUNSHINE. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. KWMFP25R12NS3
Manufacturer: JUNSHINE
Category: IGBT Transistors
Description: IGBTs L1 RoHS
Datasheet: KWMFP25R12NS3 Datasheet (PDF)
Price (USD)
1: USD 40.3048 ea
Line Total: USD 40.3 
Availability : 0
  
QtyUnit Price
1$ 40.3048
30$ 37.3439

Availability 0
Ship by Thu. 02 Oct to Tue. 07 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 40.3048
30$ 37.3439

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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We are delighted to provide the KWMFP25R12NS3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KWMFP25R12NS3 and other electronic components in the IGBT Transistors category and beyond.

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The KWMFP25R12NS3 is an insulated gate bipolar transistor (IGBT) module manufactured by JUNSHINE. This module is RoHS compliant, meaning that it is free of lead and other hazardous chemicals. It has 3 IGBTs per module mounted on a single heat-sink of 25mm in height and rated at 1200 volts. The module has an ultra-low on-state voltage, low gate-drive current and high current carrying capability. Additionally, it has a high dynamic immunity with extreme ruggedness, making it suitable for a wide variety of applications such as motor drives, HVAC, high-frequency adapters, solar inverters, and UPS systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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