X-On Electronics has gained recognition as a prominent supplier of KND4820B MOSFETs across the USA, India, Europe, Australia, and various other global locations. KND4820B MOSFETs are a product manufactured by KIA. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

KND4820B KIA

KND4820B electronic component of KIA
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Part No.KND4820B
Manufacturer: KIA
Category: MOSFETs
Description: MOSFET N Channel 200V 9A(Tc) 3V @ 250uA 300mO @ 4.5A,10V TO-252 RoHS
Datasheet: KND4820B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the KND4820B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KND4820B and other electronic components in the MOSFETs category and beyond.

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The KND4820B with MOSFET N Channel 200V 9A(Tc) 3V @ 250uA 300mO @ 4.5A,10V TO-252 RoHS is a metal-oxide-semiconductor field effect transistor (MOSFET) manufactured by KIA. It is a N-channel MOSFET with a 200V Drain-to-Source voltage (Vds), and 9A(Tc) threshold current (Igs). It has a 3V Gate-to-Source voltage (Vgs) at 250uA, and a maximum Drain-to-Source current (Ids) of 4.5A at 10V. The TO-252 packaging has been upgraded to RoHS compliance. This is a high-performance MOSFET designed for use in high-current switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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